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Operation method of magnetic random access memory device

A random access memory and magnetoresistive technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of tunnel barrier layer damage, inability to guarantee current, asymmetry, etc.

Active Publication Date: 2010-01-13
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Therefore, due to the current value between the source and drain I DS The difference between the currents +I and -I flowing through the magnetoresistive structure becomes asymmetrical
Therefore, the tunnel barrier layer of the magnetoresistive structure M may be broken, or the current required to perform the write operation may not be secured.

Method used

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  • Operation method of magnetic random access memory device
  • Operation method of magnetic random access memory device
  • Operation method of magnetic random access memory device

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Embodiment Construction

[0023] Exemplary embodiments of the present invention will be more clearly understood from the detailed description taken in conjunction with the accompanying drawings.

[0024] Various example embodiments of the invention will now be described more fully with reference to the accompanying drawings, in which some example embodiments of the invention are shown. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity.

[0025] Specific exemplary embodiments of the present invention are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments of the present invention. This invention may, however, be embodied in many alternative forms and should not be construed as limited to only the embodiments set forth herein.

[0026] Therefore, although the example embodiments are capable of various modifications and alternative forms, the examples of the exa...

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Abstract

Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2008-0067205 filed with the Korean Intellectual Property Office on Jul. 10, 2008, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a method of operating a magnetic random access memory device. Background technique [0003] With the development of the information industry, a large amount of information needs to be processed, so the demand for high-capacity information storage media continues to grow. As demand for high-capacity information storage media increases, research into small-sized information storage media with high data storage speeds has been conducted, resulting in the development of various types of conventional information storage devices. [0004] Traditional information storage devices can be mainly classified into volatile information storage devices and non-volatile information storage devices. In volatile...

Claims

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Application Information

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IPC IPC(8): G11C11/15H01L27/22
CPCG11C11/16G11C11/1659G11C11/1675G11C11/15H10B61/22H10N50/10
Inventor 金洸奭徐顺爱金起园黄仁俊申炯淳李昇妍李丞晙
Owner SAMSUNG ELECTRONICS CO LTD