Unlock instant, AI-driven research and patent intelligence for your innovation.

Quantum well infrared focal plane array and manufacturing method

A technology of well infrared focal plane array, which is applied in the field of quantum well infrared focal plane array and its production, can solve the problems of infrared light signal loss, complex processing technology, and reduce the absorption efficiency of infrared light signal, so as to achieve good detection and simplified processing Process, the effect of improving absorption efficiency

Inactive Publication Date: 2012-04-18
SUN YAT SEN UNIV
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the quantum well infrared focal plane array in traditional technology, according to the selection rules of quantum mechanics, the quantum well infrared detector cannot absorb the vertically incident infrared light signal
Therefore, for the conventional quantum well infrared focal plane array, the vertically incident infrared light signal can only be scattered into a non-vertical scattered infrared light signal through the action of the coupling grating, due to the loss of the infrared light signal in this process , which reduces the absorption efficiency of infrared light signals. At the same time, the specific structural parameters of the grating are more sensitive to the coupling efficiency of infrared light signals. Therefore, the grating must be finely prepared, which undoubtedly increases the preparation of the quantum well infrared focal plane. difficulty
At the same time, in order to bond with the signal readout circuit array, the quantum well infrared focal plane array with a coupled grating structure can only use the back-incidence method, which is not conducive to the effective absorption of infrared light.
Invention patent 200710171905.5 discloses a quantum well infrared detector with multiple light scattering coupling, which mainly completes the scattering coupling of vertically incident infrared light signals through the array layer formed by metal balls or balls coated with metal on the surface, but Such a structure is still a scattering coupling, and the incident infrared light signal passes through the substrate layer, which will also cause the loss of the infrared light signal, thereby reducing the absorption efficiency of the infrared light signal
[0003] To sum up, the existing quantum well infrared focal plane array adopts coupling grating and back-incidence mode, which makes the processing technology complicated, and at the same time, it cannot effectively absorb the incident infrared light signal, making the quantum well infrared focal plane array Device performance is greatly affected by

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum well infrared focal plane array and manufacturing method
  • Quantum well infrared focal plane array and manufacturing method
  • Quantum well infrared focal plane array and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] as attached figure 1 , 2 As shown in FIG. 1 , a structural diagram and a schematic cross-sectional view of the quantum well infrared focal plane array in the present invention are shown.

[0020] A quantum well infrared focal plane array, comprising a substrate 5, a quantum well infrared detector array 6 composed of a quantum well infrared detector unit 1 placed on the front of the substrate 5, placed on the back of the substrate 5 and the The quantum well infrared detector unit 1 corresponds to the readout circuit array 7 that realizes the detection signal readout, and the quantum well infrared detector array 6 and the readout circuit array 7 are interconnected by the upper electrode lead 3 and the lower electrode lead 4 In the said quantum well infrared detector array 6, the adjacent quantum well infrared detector unit 1 column is also provided with an infrared light reflective mirror table 2, and this infrared light reflective mirror table 2 is a side edge and a sub...

Embodiment 2

[0024] The device process flow of the quantum well infrared focal plane array in the present invention is as follows: on the substrate 5, the upper ohmic contact layer 8 and the multiple quantum well layer 9 in the middle are grown on the substrate 5 by molecular beam epitaxy or metal organic chemical vapor phase growth. And the lower ohmic contact layer 10, then use photoresist to protect the area to be etched infrared light reflection mirror stage 2, etch out the quantum well infrared detector unit 1, then use photoresist to etch the quantum well The trap infrared detector unit 1 is protected, and the etching of the infrared light reflection mirror stage 2 is completed by means of atomically precise etching such as AsBr3 dry etching. The purpose of atomically precise etching is to form a smooth reflector surface. After that, A material that can reflect infrared light well, such as a gold coating, is evaporated on the surface of the infrared light reflecting mirror table. The...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a quantum well infrared focal plane array. The array comprises a substrate, a quantum well infrared detector array positioned on the front surface of the substrate and consisting of quantum well infrared detector units, and a readout circuit array positioned on the back surface of the substrate. The quantum well infrared detector array and the readout circuit array positioned on the back surface are interconnected by an upper electrode lead and a lower electrode lead, and an infrared light reflector base is arranged between lines of the quantum well infrared detector units in the quantum well infrared detector array. The array utilizes the infrared light reflector base designed in the quantum well infrared focal plane arrange to reflect a vertical incidence infrared light signal to an infrared light signal parallel to the upper surface of the quantum well infrared detector units. The invention also discloses a manufacturing method of the quantum well infrared focal plane array. The quantum well infrared focal plane array realizes detection of the infrared light signal in a front incidence manner and can effectively absorb the infrared light signal and easily machined.

Description

technical field [0001] The invention relates to an infrared focal plane array and a manufacturing method thereof, in particular to a quantum well infrared focal plane array and a manufacturing method thereof. Background technique [0002] In the quantum well infrared focal plane array in the traditional technology, according to the selection rule of quantum mechanics, the quantum well infrared detector cannot absorb the vertically incident infrared light signal. Therefore, for the conventional quantum well infrared focal plane array, the vertically incident infrared light signal can only be scattered into a non-vertical scattered infrared light signal through the action of the coupling grating, due to the loss of the infrared light signal in this process , which reduces the absorption efficiency of infrared light signals. At the same time, the specific structural parameters of the grating are more sensitive to the coupling efficiency of infrared light signals. Therefore, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/16H01L27/144H01L21/82H01L21/48H01L21/60
Inventor 孙鲁江灏
Owner SUN YAT SEN UNIV