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Method for predicting storage failure of multi-beam klystron

A fault and injection speed technology, applied in the direction of vacuum tube testing, etc., can solve the problems of inability to monitor the change of vacuum degree in the tube and no related reports.

Inactive Publication Date: 2010-05-12
INST OF ELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the multi-injection klystron without ion pump does not have an ion pump, it is impossible to monitor the change of vacuum in the tube
At present, there is no relevant report on the method for predicting the storage failure of multi-beam klystrons

Method used

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  • Method for predicting storage failure of multi-beam klystron
  • Method for predicting storage failure of multi-beam klystron

Examples

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Embodiment Construction

[0020] A method for predicting storage faults of multi-note klystrons according to the present invention comprises the steps of:

[0021] a) Store the tested and experienced multi-injection klystrons for 40-45 days;

[0022] b) Preheat the multi-beam klystron according to the factory rated filament current and voltage, and the preheating time.

[0023] c) Measure the cathode emission current according to the factory rated cathode high voltage. The initial 3-minute cathode emission current value was recorded at a sampling interval of 15 seconds, and the change curve of the cathode emission current value with time was drawn.

[0024] d) If the change curve of the cathode emission current value with time appears to drop first and then rise (see figure 1 ), when the cathode emission current I drops (I 0 -I min ) is the rated value I 0 It can be determined that the multi-shot klystron may have a storage failure during the storage period of more than half a year. The probabili...

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Abstract

The invention discloses a method for predicting a storage failure of a multi-beam klystron, which relates to the vacuum electronic device technology and comprises the following steps: measuring the cathode emission characteristic of the multi-beam klystron which has no ion pump and is stored for 40 to 45 days; recording a cathode emission current value in the first three minutes according to 15 seconds of a sampling time interval; and drawing a curve that the cathode emission current value changes along with time, wherein if the curve that the cathode emission current value changes along with time occurs a phenomenon of declining first and then rising, and the proportion of declining is more than 10 percent of a rated value, then the probability of occurring the storage failure of the device can be predicted over 60 percent after being stored for more than half a year. The method of the invention is suitable for the multi-beam klystron without the ion pump, and can also be popularized to other microwave vacuum devices without the ion pump, such as a klystron without the ion pump, a traveling wave tube without the ion pump and the like.

Description

technical field [0001] The invention relates to the technical field of electric vacuum devices, and relates to a method for predicting storage faults of multi-beam klystrons without ion pumps. Background technique [0002] Multi-beam klystron is a key component of radar transmitter and has important applications in fast-response microwave electronic systems. The requirements of the fast response system for the multi-injection klystron are: 1) It is small in size and light in weight. Therefore do not allow this type of device to have an ion pump that can absorb the residual gas in the tube; 2) the storage time is long. The general storage time is more than half a year, up to 3 to 5 years. 3) After long-term storage, the device can reach its rated operating parameters within 3 minutes of starting to work. [0003] In order to meet the above requirements, during the manufacture, testing and aging process of multi-injection klystrons without ion pumps, the residual gas in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/25
Inventor 丁耀根丁海兵徐旭哲
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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