Method for removing photoresist and method for manufacturing connecting hole

Abstract

The invention discloses a method for removing photoresist, comprising the steps of providing a substrate with a photoresist layer; implementing plasma pretreatment on the photoresist layer; and removing the photoresist layer after the plasma pretreatment, wherein the plasma pretreatment is reactive ion etching process. The invention also provides a manufacturing method of a connecting hole. The invention can reduce or eliminate the defect of photoresist residue.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing photoresist and a method for manufacturing connection holes. Background technique [0002] In the semiconductor manufacturing process, it is necessary to form a photoresist pattern on the semiconductor substrate by photolithography, define a region to be processed in advance, and then perform etching or ion implantation according to the photoresist pattern. The level and quality of photolithography process directly affect the results of etching or ion implantation. [0003] In the photolithography process, the photoresist is first uniformly spin-coated on the surface of the semiconductor substrate by spin-coating, and then through a series of processes such as baking (bake), exposure (exposure), development (develop) and so on. The pattern on the film plate is transferred to the photoresist on the surface of the semiconductor substrate t...

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Problems solved by technology

[0005] However, the above method for removing photoresist removes the photoresist layer through an inductively coupled plasma reaction process, and it is often difficult to remove the photoresist completely, and there will be photoresist residues on the substrate surface

Especially in the manufacturing process of trenches and / or contact holes of dual damascene structures, it is often necessary to use fluorine-containing gases as etching gases, such as CF 4 、C 4 f 6 , when performing etching with the above-mentioned gas plasma, the plasma will interact with the photoresist to form a difficult-to-remove polymer hard film on the surface of the photoresist, which is difficult to remove and will cause residual Physical defects

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