Method for photoetching piezoelectric film transducers on two sides of acoustic bulk wave

A piezoelectric film, double-sided lithography technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, microlithography exposure equipment, etc., which can solve the problem of positioning Poor accuracy, low product yield, and irregular patterning of mechanical masks, to achieve the effect of large size range and high alignment accuracy

Active Publication Date: 2010-07-07
CHINA ELECTRONICS TECH GRP NO 26 RES INST
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The graphics produced by the mechanical mask are not standardized and the precision is poor. If the graphic design size is less than 0.1mm, there will be problems in the production of the mechanical mask
At the same time, the fixing of the mask and the fixture depends on manual

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The double-sided lithography manufacturing method of the bulk acoustic wave piezoelectric film transducer of the present invention comprises the following steps:

[0018] 1) According to the designed electrode pattern of each layer of the bottom electrode, the piezoelectric film and the upper electrode, make a double-sided photolithography mask for the bottom electrode, a piezoelectric film for overlaying, and a mask for the upper electrode. The bottom electrode mask is two pieces with the same pattern, which are mirror images of each other, and there are alignment marks on the bottom electrode mask to realize the alignment of the two plates;

[0019] 2) Form the bottom electrode metal film at both ends of the sound transmission medium by evaporation or sputtering;

[0020] 3) Double-sided photolithography of the bottom electrode pattern on the bottom electrode metal film at both ends of the sound transmission medium through the two bottom electrode masks;

[0021] 4) ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for photoetching piezoelectric film transducers on two sides of an acoustic bulk wave, which comprises the following steps: 1) manufacturing a two-side photoetching mask for a bottom electrode, a piezoelectric film for alignment and an upper electrode mask according to electrode patterns on each layer of the designed bottom electrode, piezoelectric film and upper electrode; 2) forming metal films for the bottom electrode at two ends of an acoustic transmission medium; 3) photoetching the bottom electrode patterns on two sides of the metal films of the bottom electrode; 4) sputtering the piezoelectric films at two ends of the acoustic transmission medium; 5) evaporating or sputtering the upper electrode films at two ends of the acoustic transmission medium; 6) manufacturing patterns of the piezoelectric film by alignment; and 7) manufacturing patterns of the upper electrode by alignment. The method solves the problems that a mechanism mask has small size and the pattern of the mask cannot be printed, and the manufactured patterns lack of standardization and have poor precision, and the like. Therefore, the precision of the mask and the consistency of the electrode patterns can reach micron dimension; the acoustic transmission medium has wider dimension range; and the aligned precision at two ends in the range from 2 to 90mm is high, and the alignment can be less than 5 microns.

Description

technical field [0001] The invention relates to a piezoelectric thin film transducer, which is a core component of a bulk acoustic wave microwave delay line, and specifically refers to a process for manufacturing a piezoelectric thin film transducer at both ends of a sound transmission medium. Background technique [0002] The core part of the bulk acoustic wave microwave delay line is the piezoelectric film transducer. According to different positions, piezoelectric film transducers are divided into input transducers and output transducers, both of which have exactly the same structure, located symmetrically at both ends of the sound transmission medium (crystal), and the input transducer at the input end of the sound transmission medium The transducer located at the output end of the sound transmission medium is the output transducer. [0003] According to the pattern and requirements of the electrode film of each layer of the designed transducer, make the corresponding p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L41/22G03F7/20H01L41/332
Inventor 汤劲松朱昌安周勇郑泽渔米佳于新晓马晋毅李仁挥
Owner CHINA ELECTRONICS TECH GRP NO 26 RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap