The invention discloses a
broadband sound body wave
delay line device film layer structure and a preparation method thereof. The film layer structure comprises a sound
transmission medium, an input thin film
transducer and an output thin film
transducer, wherein the input thin film
transducer and the output thin film transducer are arranged at the two ends of the sound
transmission medium respectively; each of the two thin film transducers comprises a bottom
electrode, an AlScN piezoelectric thin film and an upper
electrode which are sequentially arranged away from the sound
transmission medium; the orientation of the AlScN piezoelectric film is C-axis orientation, and the
full width at half maximum is 1-4; and the
doping concentration of Sc in the AlScN piezoelectric film is 5 at%-25 at%. According to the film layer structure, the AlScN thin film is adopted as a piezoelectric material of the transducer, due to the high
electromechanical coupling coefficient of the AlScN thin film, the bandwidth of the device can be effectively improved through the structure, and the application scene with the higher
bandwidth requirement is met. In addition, by further controlling the orientation, the
full width at half maximum and the Sc
doping concentration of the AlScN thin film, the
relative bandwidth can reach 98% or above, and wider
signal processing capacity and anti-interference capacity are achieved.