Solid-state imaging device

Abstract

A solid-state imaging device includes a plurality of vertical signal lines that propagate, for respective columns of a pixel array, pixel signals from pixels, a plurality of sample-hold-signal converting circuits provided in a number larger than a number of the vertical signal lines, a plurality of switch circuits that connect one of the vertical signal lines and two or more of the sample-hold-signal converting circuits, and a control circuit that separately switches the switch circuits such that one of the vertical signal lines is connected to one of the sample-hold-signal converting circuits.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Japanese Patent Application No. 2009-009285 filed on January 19, 2009, and the entire contents of this Japanese Patent Application are hereby incorporated by reference. technical field [0003] The present invention relates to a solid-state imaging device. Background technique [0004] Regarding a solid-state imaging device, for example, a CMOS area sensor is configured such that a sample-and-hold signal conversion circuit is disposed in each column of a pixel array in which pixels outputting a voltage signal corresponding to the amount of light are arranged in an array of n columns and m rows. The sample-hold signal conversion circuit corresponding to the column obtains the voltage signal output by each pixel in the selected row of the pixel array, and converts it into a digital signal, and the sample-hold signal conversion circuit selected by the column sequentially converts the ...

AI Technical Summary

Problems solved by technology

[0005] Therefore, in the CMOS area sensor, there is a problem that when any of the sample-hold signal conversion circuits arranged for each column of the pixel array does not operate normally due to a failure, the picture of the generated two-dimensional image will be blurred. qualitative deterioration

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