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Light emitting device, light emitting device package and lighting system including the same

A light-emitting device packaging and light-emitting device technology, applied in the field of lighting systems, can solve problems such as design and manufacturing process difficulties, increased manufacturing costs, and complex optical lens design

Active Publication Date: 2013-11-06
SUZHOU LEKIN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the optical lens may be complex to design and the light emission pattern should be carefully considered
Therefore, design and manufacturing process constraints can be difficult and can incur additional cost
[0007] Also, although a radiation pattern and a lens structure for realizing a light emitting pattern in the lateral direction are proposed in the related art, it may be difficult to design the lens, and the manufacturing cost may increase

Method used

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  • Light emitting device, light emitting device package and lighting system including the same
  • Light emitting device, light emitting device package and lighting system including the same
  • Light emitting device, light emitting device package and lighting system including the same

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Embodiment approach

[0026] figure 1 is a sectional view of the light emitting device according to the first embodiment.

[0027] The light emitting device (LED) according to the first embodiment includes: a first conductive type semiconductor layer 110 , an active layer 120 and a second conductive type semiconductor layer 130 disposed on a first substrate 100 . A first electrode 115 and a second electrode 135 are respectively disposed on the first conductive type semiconductor layer 110 and the second conductive type semiconductor layer 130 . Also, the LED may have anti-reflection regions defined on side surfaces of the first substrate 100 , the first conductive type semiconductor layer 110 , the active layer 120 , and the second conductive type semiconductor layer 130 .

[0028] figure 1 A vertical cross-sectional view of a lateral-type LED is explained. In the first embodiment, the anti-reflection area may be the anti-reflection layer 170, but is not limited thereto.

[0029] In the LED acc...

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Abstract

Provided are a light emitting device, a light emitting device package and a lighting system comprising the same. The light emitting device comprises a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and an anti-reflection region on a lateral surface of the light emitting structure.

Description

technical field [0001] Embodiments relate to a light emitting device, a light emitting device package, and a lighting system including the same. Background technique [0002] Nitride semiconductors have received much attention in the fields of optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices (LEDs), green LEDs, and UV LEDs using nitride semiconductors have been commercialized and widely used. [0003] Light emitting diodes are now being used as light sources for displays, indoor and outdoor lighting, and headlights for vehicles. In particular, many products are being developed for high-power LEDs suitable for backlight units (BLUs) of such LEDs. [0004] The edge-type BLU structure is used for relatively small-sized LED BLUs, and the vertical-type BLU structure is used for relatively large-sized LED BLUs. [0005] However, in the case of a vertical type BLU structure f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/10H01L33/48
CPCH01L33/22H01L33/44H01L2224/48091H01L2924/00014
Inventor 崔正铉金在煜姜正模金斗显
Owner SUZHOU LEKIN SEMICON CO LTD