Exposure machine, array substrate, patterned film, photoresist layer and formation method
A technology for patterning thin films and photoresist layers, which can be used in microlithography exposure equipment, originals for photomechanical processing, and exposure devices for photo-engraving processes, and can solve problems such as bright and dark lines on display screens and uneven lens color.
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[0064] Figure 1A is a schematic diagram of an exposure machine according to an embodiment of the present invention, and Figure 1B yes Figure 1A A schematic top view of the photomask. Please refer to Figure 1A The exposure machine 100 of this embodiment is suitable for exposing a photoresist layer 210 on a thin film 200 to form a plurality of stripe-shaped exposure patterns 212 on the photoresist layer 210 . The exposure machine 100 includes a light source 110 , a lens group 120 and a photomask 130 . The light source 110 may be a krypton fluoride laser, argon fluoride laser, fluorine laser or other known exposure light sources. The lens group 120 is disposed between the photoresist layer 210 and the light source 110 . The lens group 120 includes a plurality of strip lenses 122 arranged parallel to each other, wherein the overlapping area of any two adjacent strip lenses 122 is defined as a lens joint area 124, and the area outside the lens joint area 124 is defined as a...
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Abstract
Description
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