Quaternary upright lighting diode with double roughened surfaces and preparation method thereof

Abstract

The invention discloses a quaternary upright lighting diode with double roughened surfaces and a preparation method thereof, wherein a Prague reflective layer is formed on a substrate, and a first epitaxy layer is formed on the Prague reflective layer; a lighting layer is formed on the first epitaxy layer and provided with a second epitaxy layer; a first GaP window layer with small round holes or net structure is formed on the second epitaxy layer; a second GaP window layer with small round holes or net structure is formed on the first GaP window layer; a first electrode is formed on the top of the second GaP window layer; a second electrode is formed at the bottom of the substrate; after normal technique, stagger small round holes or net structures are formed between the first GaP window layer and the second GaP window layer to change the path of light emitted from the lighting layer to the surface of the lighting diode chip, thus more light is emitted from the inside; and the light outtake rate of the invention is increased by 20% compared with the existing diode.

Description

technical field [0001] The invention relates to a quaternary system light-emitting diode, in particular to a quaternary system vertical light-emitting diode with double-layer roughening on the surface and a preparation method thereof. Background technique [0002] At present, light-emitting diodes have been widely used in economic life such as display, decoration, and communication. Their general structure generally includes a substrate, a distributed Bragg reflection layer, a first epitaxial layer, a light-emitting layer, a second epitaxial layer, a window layer, and a second epitaxial layer. a first electrode and a second electrode. The window layer (window layer) of the existing quaternary system AlGaInP vertical structure light-emitting diodes mostly adopts a single GaP layer structure, and its upper surface is planar. In this way, when the light-emitting layer located in the middle interlayer emits light, part of the light is emitted from the outside of the element , a...

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Problems solved by technology

The window layer (window layer) of the existing quaternary system AlGaInP vertical structure light-emitting diodes mostly adopts a single GaP layer structure, and its upper surface is planar. In this way, when the light-emitting layer located in the middle interlayer emits light, part of the light is emitted from the outside of the element , and most of the light will produce total reflection, resulting in poor light exit effect, because the semiconductor material is a high refractive index material compared to the external air, so when the light exit angle is greater than a certain critical angle, it will occur Total reflection; at the same time, total reflection light will generate heat energy inside the light-emitting diode, which will increase the overall temperature of the light-emitting diode and greatly affect the reliability of the product

[0003] In order to suppress the problem of more total reflected light caused by the large difference between the high and low refractive indices, some researchers have proposed the method of roughening the P-GaN surface, that is, roughing the interface according to a certain rule to make part of the total reflected light to scatter light. In order to improve the light output rate; directly roughen the upper surface of the LED, but this method will cause certain damage to the active layer and transparent electrode, and the production is also relatively difficult

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