Solid-state imaging device comprising through-electrode

Abstract

A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a through-electrode and a first electrode. The imaging element is formed on a first major surface of a semiconductor substrate. The external terminal is formed on a second major surface opposing the first major surface of the semiconductor substrate. The insulating film is formed in a through-hole formed in the semiconductor substrate. The through-electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first electrode is formed on the through-electrode on the first major surface of the semiconductor substrate. When viewed from a direction perpendicular to the first major surface of the semiconductor substrate, an outer shape with which the insulating film and the semiconductor substrate are in contact is larger than an outer shape of the first electrode.

Description

[0001] This application claims the benefit of priority from Japanese Patent Application No. 2009-100068 filed Apr. 16, 2009, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a solid-state imaging device having a penetrating electrode formed on a semiconductor substrate, for example, to an imaging module. Background technique [0003] Along with miniaturization of electronic equipment, miniaturization and high integration of mounted semiconductor devices are also required. In the second half of the 1990s (1990s), practical research on Wafer Level Chip Scale Packages (Wafer Level Chip Scale Package) began (see, for example, Nikkei Micro Devices, April 1998, P28, P164, and P176). In the flip-chip method in which leads are eliminated, the surface of the semiconductor chip faces downward, and the substrate and the semiconductor chip are bonded using bumps. [0004] On the other hand, since the second hal...

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Problems solved by technology

[0006] However, in all of these documents, the through-electrodes proposed are formed in the silicon semiconductor substrate. Therefore, due to the coupling between the through-electrodes and the silicon semiconductor substrate, or the high ground resistance around the through-electrodes, the following problems arise: Deterioration of the power supply supplied to the electrode, or conversely, power supply noise from the silicon semiconductor substrate side, and the desired good voltage waveform cannot be formed

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