Radio frequency power amplifier with push-pull structure

Abstract

The invention discloses a radio frequency power amplifier with a push-pull structure, which comprises an input matching network connected with the input end of the power amplifier, an output matching network connected with the output end of the power amplifier and a power amplifier circuit connected between the input matching network and the output matching network, and an output-stage circuit of the power amplifier circuit is a second-stage NPN-NPN push-pull power amplifier circuit which mainly consists of a second common collector amplifier tube and a second common emitter amplifier tube. The radio frequency power amplifier with the push-pull structure can lead the push-pull structure to be applied in the field of the radio frequency power amplifiers through the HBT process, and realize the integration of linearity and efficiency.

Description

technical field [0001] The invention relates to the technical field of radio frequency integrated circuits, in particular to a radio frequency power amplifier with a push-pull structure. Background technique [0002] With the emergence of third-generation mobile communication systems, RF power amplifiers have been increasingly used in wireless communications. In order to ensure good communication quality, communication systems have increasingly stringent requirements on the efficiency and linearity of RF power amplifiers. At present, the design ideas of RF power amplifiers focus on two aspects: one is to bias the power output stage circuit to class A, the linearity of the power amplifier is effectively improved, but the efficiency is reduced; the other is to bias the power output stage circuit to If it is placed in class B, it cannot take into account linearity while obtaining efficiency. Therefore, most RF engineers choose a compromise solution - biasing the power output s...

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Problems solved by technology

However, the development of push-pull power amplifiers based on HBT technology is slow

Another reason for this phenomenon is that NPN and PNP power tubes are very different in terms of magnification and working speed. The two branches of the output stage of the push-pull structure do not have perfect symmetry, resulting in push-pull structure. The linearity of the power amplifier is not high. This shortcoming makes the NPN-PNP compensation HBT push-pull structure not applied to the field of RF power amplifier for a long time, which hinders the development of push-pull structure RF power amplifier based on HBT technology.

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