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Grating for euv-radiation, method for manufacturing the grating and wavefront measurement system

A wavefront measurement and projection optical system technology, applied in the field of lithography equipment, can solve the problems of difficult to manufacture gratings, difficult to obtain large height difference, etc., and achieve the effect of simplifying manufacturing

Active Publication Date: 2014-02-26
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0016] A possible disadvantage of this known grating is that it can be difficult to manufacture, since it is difficult to obtain a pattern of reflective dots with large height differences and at the same time with predetermined in-plane dimensions

Method used

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  • Grating for euv-radiation, method for manufacturing the grating and wavefront measurement system
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  • Grating for euv-radiation, method for manufacturing the grating and wavefront measurement system

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Embodiment Construction

[0062] In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details. In other instances, well-known methods, procedures and components have not been described in detail so as not to obscure aspects of the invention. The present invention will be described more fully hereinafter with reference to the accompanying drawings that show embodiments of the invention. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions are exaggerated for clar...

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Abstract

A grating for EUV-radiation includes a plurality of reflecting lines. Each reflecting line includes a plurality of first reflecting dots, and a plurality of second reflecting dots arranged between each other. The first reflecting dots and the second reflecting dots are configured to reflect EUV-radiation with a mutual phase difference of 180±10 degrees mod 360 degrees.

Description

technical field [0001] The invention relates to a grating for EUV radiation, a method for manufacturing the grating and a wavefront measurement system, for example for a lithographic apparatus comprising said grating. Background technique [0002] Photolithography is the process used to create features on the surface of a substrate. Such substrates may include substrates used in the manufacture of flat panel displays, circuit boards, various integrated circuits (ICs), and the like. A substrate often used for such applications is a semiconductor wafer. Those of relevant skill in the art will recognize that the description herein applies to other types of substrates as well. In this case, the patterning structure can generate a circuit pattern corresponding to a single layer of the IC, and this pattern can be imaged onto a target portion (e.g., comprising one or more dies) on a substrate (e.g., a silicon wafer). ), the substrate is coated with a layer of radiation-sensitive...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/18G03F7/20
CPCG02B5/1861G03F7/706G03F7/70316G02B5/1857G02B5/1838G21K1/06G21K1/067
Inventor B·克鲁兹卡M·G·D·维瑞恩斯M·D·奈格克K·F·费尼斯达
Owner ASML NETHERLANDS BV