Luminous element and manufacturing method thereof

Abstract

The invention discloses a luminous element and a manufacturing method thereof. The luminous element has a luminous epitaxial structure. Under the condition of reverse bias voltage and the current density of -10 mA / m<2>, the absolute value of the corresponding critical reverse voltage of the luminous epitaxial structure is more than 50 V; and the luminous epitaxial structure is driven by the current density of 150mA / m<2> under the condition of forward bias voltage, the luminous element has the luminous efficiency of at least 50LM / W. The manufacturing method for the luminous element comprises the following steps of: providing a substrate; growing a first epitaxial layer on the substrate under the first growth condition; growing a process conversion layer on the first epitaxial layer under the second growth condition; and growing a second epitaxial layer on the process conversion layer under the third growth condition, wherein the first and third growth conditions have process change; and the electric conductivity of the process conversion layer is larger than that of the first epitaxial layer and / or the second epitaxial layer.

Description

technical field [0001] The present invention relates to a light-emitting element with a high critical reverse voltage and a manufacturing method thereof. Background technique [0002] Light-emitting diodes have both rectification and light-emitting effects due to their component characteristics. When a forward bias is applied to a light-emitting diode, the current value of the light-emitting diode increases rapidly as the applied forward bias increases, and emits light of a specific wavelength. The voltage value at which the current begins to rise rapidly is called The forward voltage value of the LED (Forward Voltage; Vf); when the reverse bias voltage is applied to the LED, the applied reverse bias voltage must reach a critical value before the current value rises rapidly, and the current begins to rise rapidly The voltage value is called the reverse voltage value (Reverse Voltage; Vr) of the LED. [0003] Generally, the reverse voltage value of gallium nitride series li...

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Problems solved by technology

[0003] Generally, the reverse voltage value of gallium nitride series light-emitting diodes is usually around negative 15-20 volts. The main reason for the poor reverse voltage value is that the epitaxial film itself has many defects, such as lattice dislocation (dislocation), impurities (Impurity) etc. cause many leakage paths (leakage path), and the components cannot withstand high reverse bias voltage, and are prone to collapse and failure due to sudden high voltage during operation

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