Luminous element and manufacturing method thereof
A technology for light-emitting elements and manufacturing methods, which is applied to electrical elements, electric solid-state devices, semiconductor devices, etc., and can solve the problems of poor reverse voltage value of epitaxial films, high reverse bias voltage, collapse failure, etc.
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[0031] figure 1 The first embodiment of the light-emitting epitaxial structure of the light-emitting element according to the present invention is disclosed. The light-emitting epitaxial structure 1 includes a growth substrate 10, a contact layer 20 is formed on the growth substrate 10, a process conversion layer 31 is formed on the contact layer 20, and an n-type A cladding layer 40 is formed on the process conversion layer 31 , an active layer 50 is formed on the n-type cladding layer 40 , and a p-type cladding layer 60 is formed on the active layer 50 . The method for forming the light-emitting epitaxial structure 1 includes providing a growth substrate 10; then, epitaxially growing a contact layer 20 on the growth substrate 10 by metal-organic chemical vapor deposition. If the contact layer 20 has a different lattice constant from the growth substrate 10, it can be A lattice buffer layer (not shown) is grown between the contact layer 20 and the growth substrate 10 , wherei...
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