Iii-nitride semiconductor light emitting device

Abstract

The present disclosure relates to a Ill-nitride semiconductor light emitting device, comprising: a substrate with a plurality of protrusions formed thereon, each of the plurality of protrusions having three acute portions and three obtuse portions; and a plurality of Ill-nitride semiconductor layers formed over the substrate and including an active layer for generating light by recombination of electrons and holes.

Description

technical field [0001] The present disclosure relates to a group III nitride semiconductor light emitting device, and more particularly, to a substrate having a protrusion including a side surface exposed by wet etching and a group III nitride semiconductor light emitting device using the substrate. Background technique [0002] figure 1 is a view describing an example of a conventional group III nitride semiconductor light emitting device. The group III nitride semiconductor device includes a substrate 100, a buffer layer 200 grown on the substrate 100, an n-type nitride semiconductor layer 300 grown on the buffer layer 200, The active layer 400 grown on the semiconductor layer 300, the p-type nitride semiconductor layer 500 grown on the active layer 400, the p-face electrode 600 formed on the p-type nitride semiconductor layer 500, the The p-face bonding pad 700 formed on the p-face electrode 600 and the n-face formed on the n-type nitride semiconductor layer exposed by ...

AI Technical Summary

Problems solved by technology

Thus, the availability of scattering surfaces is limited

In this case, if the arrangement density of the protrusions is high or the protrusions are small, there may be a problem in terms of epitaxial growth, that is, mass productivity of light emitting devices

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