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Target structure and method for manufacturing target structure

A manufacturing method and structure technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of cost and time, reduced thermal conductivity of target and backplane, and high price, and achieve low-cost Effect

Inactive Publication Date: 2011-01-26
上野顺
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the above-mentioned bonding uses relatively expensive bonding materials such as In and Sn, and requires multiple steps such as alignment of the target and the back plate, modification of the joint surface, coating of the bonding material, and heat treatment.
Therefore, in bonding, it takes cost and time
On the other hand, if the bonding is not performed and simply fixed by other methods, the thermal conductivity between the target and the back plate will decrease

Method used

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  • Target structure and method for manufacturing target structure
  • Target structure and method for manufacturing target structure
  • Target structure and method for manufacturing target structure

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Embodiment Construction

[0018] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. figure 1 It is an explanatory diagram showing a longitudinal section of a schematic structure of the target structure 1 of the present embodiment. In addition, in this specification and drawings, about the component which has substantially the same functional structure, the same code|symbol is attached|subjected, and repeated description is abbreviate|omitted.

[0019] The target structure 1 includes: a plate-shaped target 10 for sputtering; and a plate-shaped backing plate 11 serving as a fixing plate that fixes the target 10 and cools the target 10 . For the material of the target 10, for example, Al, Cu, Mo, ITO, Si, AZO, etc. are used, and for the material of the back plate 11, for example, Cu, Al, Ti, stainless steel, etc. are used.

[0020] The back side of the target 10 is bonded to the back plate 11 . On the surface of the back plate 11 on the target ...

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Abstract

A target structure is manufactured with lower cost in a short time, while maintaining heat conductivity between a target and a backing plate. The target structure has the target for sputtering, and the backing plate, which has the target fixed thereon and cools the target. The backing plate has a fluid channel (40) wherein a cooling fluid flows, the backing plate and the target are fixed by means of a screw penetrating the backing plate at a position where no fluid channel exists, and a part of the target is exposed to the fluid channel.

Description

technical field [0001] The present invention relates to a target structure having a target for sputtering, and a cooling plate for cooling the target and fixing the target, and a manufacturing method thereof. Background technique [0002] For example, in the manufacturing process of a semiconductor device, etc., a sputtering device for forming a film on a substrate is used. The sputtering device has a sputtering target that emits desired atoms by collision of ionized gas or the like. The target T as Figure 4 Its rear side is bonded to backplane B as shown. During sputtering, the target T must be cooled because the temperature of the target surface rises due to collision of ions or the like. Thus, inside the back plate B, a cooling water flow path A through which normal cooling water flows is formed. [0003] Conventionally, the target T and the back plate B have been joined by so-called bonding, for example, in order to improve thermal conductivity for cooling. The bond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCC23C14/3407
Inventor 上野顺
Owner 上野顺