Intelligent IGBT

Abstract

The invention relates to an intelligent insulated gate bipolar transistor IGBT, which comprises a power circuit, a C electrode overvoltage sensing circuit, a temperature sensing circuit, an E electrode overcurrent sensing circuit, an input overvoltage and undervoltage sensing circuit and an IGBT drive control circuit. The input end of the power circuit is respectively connected with a C electrodepin and a G electrode pin; the input end of the C electrode overvoltage sensing circuit is connected with the C electrode pin and the temperature sensing circuit; the input end of the E electrode overcurrent sensing circuit is respectively connected with the E electrode pin; the input end of the input overvoltage and undervoltage sensing circuit is connected with the G electrode pin; and the output ends of the circuits are connected to the input end of the IGBT drive control circuit. In the scheme, under the condition of not changing the current package of the IGBT, an intelligent circuit module is designed in the IGBT, and timely cuts off the IGBT when an exception occurs, so the complicated peripheral protection circuits are saved, and the arranged circuit module is concisely designed and easy and convenient to install; and because the circuit module generally consists of conventional IC such as comparators and latches, the intelligent insulated gate bipolar transistor IGBT has low cost, is easy to implement, and is particularly applied in the fields such as electromagnetic ovens, switching power supplies and frequency conversion products.

Description

technical field [0001] The invention relates to an insulated gate bipolar transistor, commonly known as IGBT (Insulated Gate Bipolar Transistor), in particular to an IGBT with intelligent protection, which belongs to the technical field of IGBT improvement. Background technique [0002] Conventional IGBT visible figure 1 , can be regarded as a simple transistor, and the input signal from the G pole controls the cut-off and opening of the C pole and the E pole. This electronic device does not have any protection function, so the anti-interference ability is very poor. Any abnormal conditions such as over-temperature, over-current, over-voltage, under-voltage, etc. during use may burn out and fail. Now there are IGBTs with protection functions. The technical solution for IGBT protection is generally to add various protection circuits to the peripheral circuit of the IGBT. However, the sensitivity of this peripheral protection circuit is not high, and the circuit connection re...

AI Technical Summary

Problems solved by technology

This electronic device does not have any protection function, so the anti-interference ability is very poor. Any abnormal conditions such as over-temperature, over-current, over-voltage, under-voltage, etc. during use may burn out and fail

Now there are IGBTs with protection functions. The technical solution for IGBT protection is generally to add various protection circuits to the peripheral circuit of the IGBT. However, the sensitivity of this peripheral protection circuit is not high, and the circuit connection relationship is complicated and involves more expensive. electronic components, so it is often difficult to really effectively apply due to high cost

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