Semiconductor device, and method for manufacturing the same

Abstract

The invention provides a semiconductor device, and a method for manufacturing the same. The semiconductor device (A1) comprising a semiconductor layer having a first face having a trench (3) formed therein and a second face on the side opposite to the first face, a gate electrode (41), and a gate insulating layer (5). The semiconductor layer includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13) and an n-type semiconductor region (14). The trench (3) extends through the p-type semiconductor layer (13) to the second n-type semiconductor layer (12). The p-type semiconductor layer (13) has a first p-type semiconductor layer (131) closer to the second face of the semiconductor layer than the trench (3). As a result, a dielectric breakdown can hardly occur in the gate insulating layer (5).

Description

technical field [0001] The present invention relates to a semiconductor device having a trench structure and a method of manufacturing the same. Background technique [0002] Figure 12 An example of a cross section of a conventional vertical insulated gate semiconductor device having a trench structure is shown. This semiconductor device 9A includes a first n-type semiconductor layer 911 , a second n-type semiconductor layer 912 , a p-type semiconductor layer 913 , an n-type semiconductor layer 914 , a trench 93 , a gate electrode 94 , and a gate insulating layer 95 . [0003] The first n-type semiconductor layer 911 becomes a base of the semiconductor device 9A. The second n-type semiconductor layer 912 is formed on the first n-type semiconductor layer 911 . The p-type semiconductor layer 913 is formed on the second n-type semiconductor layer 912 . The n-type semiconductor region 914 is formed on the p-type semiconductor layer 913 . [0004] The groove 93 is formed to ...

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Problems solved by technology

When such electric field concentration is caused, insulation breakdown of the gate insulating layer 95 may be caused

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