Transistor and fabrication method thereof
A technology of transistors and manufacturing methods, applied in the field of semiconductor circuits
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[0054] Known transistors have stressed channels. This known transistor has a SiGe source and a SiGe drain. Each SiGe source and drain has a single stressor layer. Each stressed SiGe source and drain has a {111} facet in the substrate. The {111} crystal plane forms a V-shape in the substrate and is fabricated by a wet etching process, wherein the wet etching utilizes the {111} crystal plane as an etching stop layer.
[0055] It is known that SiGe source / drain can be disposed between two adjacent transistor gates. If the gap between the gates of two adjacent transistors becomes smaller, the volume of the SiGe source / drain will also become smaller because of the {111} crystal plane. And the shrinking silicon germanium source / drain may not be able to provide the compressive stress needed for the transistor channel.
[0056] Based on the above reasons, it is necessary to provide a transistor with a composite stress structure, an integrated circuit, and the above manufacturing me...
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