Base board unit processed by using substrate, base board structure and manufacturing method thereof
A substrate and substrate technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of great difficulty in manufacturing, without increasing the utilization rate of wafers, etc., to improve the surface area or surface area utilization efficiency, improving the effect of light trapping, and improving the effect of light absorption efficiency
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no. 1 example
[0021] Such as figure 1 A schematic diagram of a substrate unit 200 according to an embodiment of the present invention is shown. The substrate unit is obtained by processing a substrate, and the substrate is a single crystal substrate, which may include, for example: single crystal Si, single crystal Ge, single crystal SiGe. The substrate may have a thickness of 0.2-2mm. The substrate unit includes a semiconductor substrate 101, which is a single crystal substrate with a first doping type, such as an N-type doping configuration or a P-type doping configuration, and the semiconductor substrate includes a first surface and an opposite The second surface, the third surface and the fourth surface opposite thereto, the crystal orientation of the third surface and the fourth surface is {111}; the second doping type formed on the third surface of the semiconductor substrate 1. The first semiconductor layer 202 with a textured surface.
[0022] In particular, the first surface and...
no. 2 example
[0031] The substrate unit of the present invention has been described above according to the first embodiment of the present invention, and the second embodiment of the present invention will be described below with reference to the accompanying drawings.
[0032] According to the second embodiment of the present invention, a substrate structure using a substrate for processing is provided, such as figure 2 As shown, the structure includes: a substrate unit array.
[0033] The substrate unit array includes a plurality of substrate units 200 arranged in a predetermined direction, for example along direction A, preferably, they may be a plurality of substantially parallel substrate units. Each of the substrate units 200 includes a semiconductor substrate 101-x, which is a single crystal substrate with a first doping type, and its material may be, for example, single crystal Si, single crystal Ge, or single crystal SiGe. The semiconductor substrate includes a first surface 301 ...
no. 3 example
[0054] The single crystal substrate unit has been described above in the first embodiment, and the substrate structure of the single crystal crystal orientation {111} and its manufacturing method have been described in the second embodiment, and the single crystal crystal orientation non-{111} }, the substrate unit, structure and manufacturing method thereof are described in detail (see the second embodiment for illustration).
[0055] According to a third embodiment of the present invention, a substrate structure processed by using a substrate is provided, and the structure includes: a substrate unit array.
[0056] The substrate unit array includes a plurality of substrate units arranged in a predetermined direction, preferably, they may be substantially parallel. Each of the substrate units includes a semiconductor substrate, and the semiconductor substrate is a single crystal substrate with a first doping type, and its material may be, for example, single crystal Si, single...
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