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Insulated gate bipolar translator power tube module

A bipolar and insulated gate technology, applied in semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of increasing the power of the IGBT module, reducing the reliability of the module, and uneven current flow of the chip. Achieve high reliability, increase power, high power effect

Active Publication Date: 2011-04-13
BYD SEMICON CO LTD
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The high-power IGBT module of the existing design needs to connect the IGBT chips in parallel on the copper-clad ceramic substrate (DBC). Uneven current, which leads to the problem of lower module reliability, so the existing simple multi-chip parallel scheme cannot achieve the purpose of increasing the power of IGBT modules

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  • Insulated gate bipolar translator power tube module
  • Insulated gate bipolar translator power tube module
  • Insulated gate bipolar translator power tube module

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Embodiment Construction

[0018] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0019] now refer to figure 1 and figure 2 , which shows a specific embodiment of the IGBT module of the present invention. From figure 1 and figure 2 As can be seen from the shown structure, the insulated gate bipolar power transistor (IGBT) module 100 includes a bottom plate 10, a plurality of IGBT chips 12 and reverse diodes 14 arranged on the bottom plate 10, and on both sides of the bottom 10 respectively A conductive connection plate 3 and a conductive connection plate 4 are provided. The conductive connecting plates 3 and 4 ...

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PUM

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Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Translator) module which comprises a base plate, a plurality of IGBT chips and at least one backward diode arranged on the base plate and a first conducting connection plate and a second conducting connection plate arranged on the base plate, wherein the first conducting connection plate and the second conducting connection plate are electrically connected with each IGBT chip and the positive pole and the negative pole of the backward diode respectively and correspondingly so as to be connected with the IGBT chips and the backward diode in parallel, and preset positions between both ends of the first conducting connection plate and between both ends of the second conducting connection plate are respectively provided with an electrode leading-out part so as to lead out an installation electrode of the IGBT module. The invention can enable the IGBT module to provide large power with high reliability.

Description

technical field [0001] The invention relates to an insulated gate bipolar power tube (IGBT), in particular to a high-power IGBT module. Background technique [0002] As the application range of the insulated gate bipolar power tube (IGBT, Insulated Gate Bipolar Transistor) module is getting wider and wider, the power requirements for IGBT applications are also getting higher and higher. The size requirements of the package are getting higher and higher, so it is necessary to design a high-power ultra-compact IGBT module. [0003] At present, the highest current level of an IGBT single chip is 150A. To obtain a high-power IGBT module, a method of parallel connection of multiple IGBT chips must be used. The high-power IGBT module of the existing design needs to connect the IGBT chips in parallel on the copper-clad ceramic substrate (DBC). Uneven current, which leads to the problem of module reliability reduction, so the existing simple multi-chip parallel scheme cannot achie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/07H01L23/48
CPCH01L2224/48091H01L2924/1305H01L2924/13055
Inventor 邓海明刘春江杨胜松
Owner BYD SEMICON CO LTD
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