Image sensor of wafer-level macrolens

Abstract

The invention relates to an image sensor of a wafer-level macrolens, at least comprising a semiconductor substrate, a stacking layer and a wafer-level macrolens. The semiconductor substrate is internally provided with a plurality of optical detectors, the stacking layer is arranged above the semiconductor substrate and internally forms a plurality of metal layers, and the wafer-level macrolens is formed above the stacking layer for focusing incoming rays so that the whole pixel array can effectively, simply and conveniently reach the constant light uniformity.

Description

technical field [0001] The invention relates to an image sensor, in particular to an image sensor with a wafer-level giant lens. Background technique [0002] Semiconductor image sensors (such as Charge Coupled Devices (CCD) or Complementary Metal Oxide Semiconductor (CMOS) sensors) are commonly used in cameras or video cameras to convert visible light images into electronic signals for subsequent storage and transmission or display. [0003] As the pixel size of the image sensor is getting smaller and smaller, in order to effectively focus the light so that the light detector (such as a photodiode) can get enough light, most of today's image sensors use microlenses (microlens). figure 1 A cross-sectional view of a conventional image sensor (such as a CMOS sensor) is shown, in which a corresponding microlens 12 is used above the photodetector 10 of each pixel to focus incident light on the photodetector device 10. The microlens 12 is an optical convex lens whose size is ...

AI Technical Summary

Problems solved by technology

However, image processing technology will greatly increase the complexity of circuit design

[0007] Since the traditional image sensor has the problem of light deflection and attenuation, and there is no

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