Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for self adaptation of CMOS (Complementary Metal Oxide Semiconductor) image sensor to external ray environment

An image sensor and automatic adaptation technology, applied in image communication, parts of color TV, parts of TV system, etc., can solve the problems of inability to automatically adjust parameters, image quality does not meet, and the requirement of CMOS sensor is not very adaptable.

Inactive Publication Date: 2011-04-20
HANGZHOU SYNOCHIP DATA SECURITY TECH CO LTD
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0022] The present invention aims to solve the problems that CMOS sensors cannot automatically adjust parameters under different external light environments, resulting in that the quality of collected images does not meet the requirements, that the CMOS sensors have poor adaptability after changing the application environment, and that the consistency of CMOS sensors is not strong. A method for CMOS image sensor to automatically adapt to external light environment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for self adaptation of CMOS (Complementary Metal Oxide Semiconductor) image sensor to external ray environment
  • Method for self adaptation of CMOS (Complementary Metal Oxide Semiconductor) image sensor to external ray environment
  • Method for self adaptation of CMOS (Complementary Metal Oxide Semiconductor) image sensor to external ray environment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] Below in conjunction with accompanying drawing and embodiment the present invention will be further described:

[0051] Such as Figure 4 As shown, the method for automatically adapting the CMOS image sensor to the external light environment described in the present invention enables the equipment using the CMOS sensor to automatically adapt to changes in the external environment; no human intervention is required, and it can automatically adapt to changes in the external environment in a timely manner. Adjustment; the correction speed is fast and the accuracy is high; the correction will not conflict with the user's operation, and will not affect the stability of the device. Specific steps are as follows:

[0052] Step 1: Power on the system, the main controller initializes the CMOS, and sets the preset exposure parameters during initialization; if it has been calibrated before, use the exposure parameters saved during calibration;

[0053] Step 2: Collect a frame of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for self adaptation of a CMOS (Complementary Metal Oxide Semiconductor) image sensor to an external ray environment, which comprises the steps of: 1, initializing a CMOS by a main controller and setting a preset exposure parameter during initialization; 2, collecting a frame of empty original image and computing average gray; 3, judging whether the average gray level is within a reasonable range, if so, skipping to a step 4; 4, regulating a CMOS exposure parameter according to a result and returning to the step 2 if the average gray level is not within the reasonable range; 5, waiting for a command for collecting an image and entering a step 6 after receiving the command; 6, collecting a frame of image by the CMOS by using the current parameter; 7, analyzing and judging the image by collected the CMOS, and returning to the step 6 if the image is not qualified; and 8, processing the qualified image to finish equipment work. The method has the advantages of easiness in use, accuracy, real-time performance and stability, the easiness of the method in use lies in that the self adaptation of equipment to the external environment does not need manual control, and the accuracy of the method ensures that the equipment performance related to the image aspect can be kept in an optimal state..

Description

technical field [0001] The invention relates to the application field of CMOS image sensors, in particular to a method for the CMOS image sensor to automatically adapt to the external light environment. Background technique [0002] In the application of CMOS in the prior art, based on the preset exposure value and gain value, the image is collected after the device receives the image command, and the collected image is judged, and then the specific operation or follow-up is performed on the image according to the judgment result. use. Such as figure 1 As shown, the specific steps are as follows: [0003] Step 1: Power on the system, the main controller initializes the CMOS, and sets the preset parameters; [0004] Step 2: Wait for the command to capture images, and go to step 3 after receiving the command; [0005] Step 3: CMOS uses preset parameters to capture a frame of image; [0006] Step 4: The main controller analyzes and judges the image collected by the CMOS, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H04N5/359H04N5/374
Inventor 马震伟苗欣
Owner HANGZHOU SYNOCHIP DATA SECURITY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products