Bidirectional triode thyristor for electrostatic discharge protection of radio frequency integrated circuit

An electrostatic discharge protection, radio frequency integrated circuit technology, applied in circuits, electrical components, thyristors, etc., can solve the problems of high trigger voltage, ineffective protection of working voltage, etc., to achieve small turn-on voltage and parasitic capacitance, bidirectional ESD protection, robust Rod performance strong effect

Inactive Publication Date: 2011-04-27
ZHEJIANG UNIV
View PDF2 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the SCR trigger voltage is generally high, and it ca

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bidirectional triode thyristor for electrostatic discharge protection of radio frequency integrated circuit
  • Bidirectional triode thyristor for electrostatic discharge protection of radio frequency integrated circuit
  • Bidirectional triode thyristor for electrostatic discharge protection of radio frequency integrated circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Such as image 3 with Figure 4 As shown, a thyristor for electrostatic discharge protection includes 4 layers, wherein the bottom layer is a P-type substrate 31, the second layer is a P well 33 arranged on the P-type substrate, the first An N well 32 a and a second N well 32 b , wherein the first N well 32 a and the second N well 32 b are located on both sides of the P well 33 .

[0022] The third layer is 4 N+ implanted regions and 2 P+ implanted regions arranged on the N well, wherein the first N+ implanted region 35a, the first P+ implanted region 37a and the first N+ implanted region 37a and The third N+ implantation region 39a, the first N+ implantation region 35a and the first P+ implantation region 37a are isolated by a shallow moat 36a, the first P+ implantation region 37a and the third N+ implantation region 39a are isolated by a shallow moat 38a, and the first N+ implantation region 37a is isolated by a shallow moat 38a. The three N+ implantation regions 39...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a bidirectional triode thyristor for electrostatic discharge protection of a radio frequency integrated circuit, comprising a P-type substrate on which a P trap, a first N trap and a second N trap are arranged, wherein the first N trap and the second N trap are arranged at two sides of the P trap; a first N<+> injection region, a first P<+> injection region and a third N<+> injection region which are isolated by a shallow ditch are sequentially arranged above the first N trap from the outside to the inside, wherein the third N<+> injection region crosses the junction of the first N trap and the P trap; a second N<+> injection region, a second P<+> injection region and a fourth N<+> injection region which are isolated by a shallow ditch are sequentially arranged above the second N trap from the outside to the inside, wherein the fourth N<+> injection region crosses the junction of the second N trap and the P trap; and the surface of the P trap arranged between the third N<+> injection region and the fourth N<+> injection region is covered with gate oxide and polysilicon gates which are stacked in sequence from bottom to top. By utilizing the source-drain punchthrough of an NMOS (N-Channel Metal Oxide Semiconductor) to assist in triggering, the bidirectional triode thyristor provided by the invention has small starting voltage and parasitic capacitance and strong robustness and can provide bidirectional ESD (Electro-Static Discharge) protection.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a bidirectional thyristor used for electrostatic discharge protection of radio frequency integrated circuits. Background technique [0002] The phenomenon of electrostatic discharge (ESD) in nature poses a serious threat to the reliability of integrated circuits. In the industry, 30% of the failures of integrated circuit products are caused by electrostatic discharge. After entering the nanometer era of integrated circuits, the thinner gate oxide thickness greatly increases the probability of integrated circuits being damaged by electrostatic discharge. Therefore, improving the reliability of integrated circuit electrostatic discharge protection has a non-negligible effect on improving the yield of products. [0003] The modes of electrostatic discharge phenomenon are usually divided into four types: HBM (Human Body Discharge Model), MM (Machine Discharge Mode), CDM ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/74H01L29/06
CPCH01L29/747
Inventor 马飞韩雁董树荣宋波苗萌李明亮吴健郑剑锋
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap