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Nano wire heteroepitaxial growth method

A technology of heterogeneous epitaxy and growth method, applied in the field of heterogeneous epitaxy growth of nanowires based on substrate buffer layer, which can solve the problems of high crystal defect density and uncontrollable growth direction

Inactive Publication Date: 2011-05-04
BEIJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to solve problems such as uncontrollable growth direction and high crystal defect density caused by lattice mismatch between the nanowire material and the substrate material, the lattice mismatch degree=((nanowire material lattice constant -Lattice constant of substrate material) / lattice constant of substrate material)×100%

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Embodiment 1

[0022] Embodiment 1: Epitaxial growth of GaAs nanowires on a Si substrate, the specific steps are as follows.

[0023] 1. Al growth on Si substrate 0.4 Ga 0.6 As / GaAs buffer layer.

[0024] 2. Precipitating a gold film on the buffer layer and annealing to form alloy nanoparticles.

[0025] 3. Using alloy nanoparticles as a catalyst to carry out epitaxial growth of GaAs nanowires, the grown nanowires are as follows: Figure 4, Figure 5 Show.

[0026] According to the experimental results of Chuang, Glas and Dubrovskii et al. [Linus C. Chuang, et al., Applied Physics Letters, vol.90, 43115, 2007; E.Ertekin, et al., Journal of Applied Physics, vol.97, 114325, 2005,; G.E.Cirlin, et al., Phys.Status Solidi, vol.4, 112, 2009], the lattice mismatch of Si and GaAs is 4%, and the corresponding critical diameter is 110 nm. If the diameter of the directly grown nanowire exceeds this critical diameter, the growth direction of the nanowire is disordered and forms a quasar cluster [L...

Embodiment 2

[0027] Embodiment 2: Epitaxial growth of In on Si substrate 0.3 Ga 0.7 As nanowires, the specific steps are as follows.

[0028] 1. Growth of In on Si substrate 0.4 Ga 0.6 As buffer layer.

[0029] 2. Precipitating a gold film on the buffer layer and annealing to form alloy nanoparticles.

[0030] 3. Using alloy nanoparticles as catalysts, In 0.3 Ga 0.7 Epitaxial growth of As nanowires.

Embodiment 3

[0031] Embodiment 3: Epitaxial growth of In on Si substrate 0.3 Ga 0.7 As 0.5 P 0.5 nanowires, the specific steps are as follows.

[0032] 1. Growth of In on Si substrate 0.4 Ga 0.6 As 0.4 P 0.6 The buffer layer.

[0033] 2. Precipitating gold nanoparticles on the buffer layer and annealing to form alloy nanoparticles.

[0034] 3. Using alloy nanoparticles as catalysts, In 0.3 Ga 0.7 As 0.5 P 0.5Epitaxial growth of nanowires.

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Abstract

The invention relates to a nano wire heteroepitaxial growth method, wherein lattice mismatch exists between a nano wire material and a substrate material. The method comprises the following steps of: a. growing a buffering layer on a substrate, wherein the lattice mismatch between the buffering layer material and the nano wire material is smaller than 10 percent; b. depositing metal nano particles or a metal film on the buffering layer, and annealing so that the metal nano particles or the metal film form alloy nano particles together with the buffering layer; and c. carrying out heteroepitaxial growth of a nano wire by taking the alloy nano particles as a catalyst. The nano wire prepared on the basis of the method provided by the invention is not limited by a critical diameter and has the characteristics of consistent growth direction, capability of control and high crystal quality.

Description

Technical field: [0001] The invention relates to a nanowire heterogeneous epitaxial growth method, in particular to a nanowire heterogeneous epitaxial growth method based on a substrate buffer layer under the condition that there is lattice mismatch between the nanowire material and the substrate material. Background technique: [0002] Because nanowires have good application prospects in the fields of high-performance electrical and optical devices, optoelectronic integration and sensing [Yi Cui, et al., science, vol.291, 851, 2001; FernandoPatolsky, et al., science, vol .313, 1100, 2006], and now more and more research institutions are paying attention to the growth of nanowires. In particular, bottom-up (bottom-up) epitaxial growth of self-supporting (free standing) nanowires has higher crystal quality, growth direction is easier to control, and easier to integrate [R.S.Wagner, et al., Applied Physics Letters, vol.4, 89, 1964; E.I.Givargizov, Journal of Crystal Growth, V...

Claims

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Application Information

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IPC IPC(8): B82B3/00
Inventor 任晓敏黄辉郭经纬叶显王琦蔡世伟黄永清
Owner BEIJING UNIV OF POSTS & TELECOMM