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Fault tolerance design method for solid-state memory device

A solid-state storage device and fault-tolerant design technology, which is applied to the redundancy of hardware for data error detection and response error generation, can solve the problems of increasing costs and achieve the effect of prolonging the service life

Active Publication Date: 2012-11-07
WUHAN SOLIC CZECHOSIOVAKIA DATA SCI & TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This undoubtedly increases the cost

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  • Fault tolerance design method for solid-state memory device
  • Fault tolerance design method for solid-state memory device
  • Fault tolerance design method for solid-state memory device

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Embodiment Construction

[0032] Hereinafter, the present invention will be described in further detail with reference to the drawings and specific embodiments. The embodiments described herein are some examples of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts fall within the protection scope of the present invention.

[0033] The invention provides a fault-tolerant design method for replacing flash particles that are about to fail or have failed by performing redundant backup on the particles of the storage medium in the solid-state storage device. Thereby greatly reducing the probability of storage device failure and the cost of the production test phase.

[0034] Such as figure 1 Shown is a functional block diagram of a general solid-state storage device at present. It mainly includes a host system 101 and a solid-state storage device 102 . Wherein, ...

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Abstract

The invention discloses a fault tolerance design method for a solid-state memory device, in which standby redundant memory particles are additionally added in design of a circuit board of a memory device, when the device has flash memory fault in production back-end test or usage, the failed particles are substituted by the redundant memory particles, thereby ensuring that excellent rate of production of the memory device cannot be influenced even encapsulation test is not performed on the particles; simultaneously, service life of the device is effectively prolonged by adding the redundant memory particles in the method, when the flash memory particles in the device reach certain service life, the flash memory particles are substituted by the redundant particles or idle particles, so that the service life of the device is effectively prolonged through the continuous substitution. The method can be implemented in process of device production test and / or usage.

Description

technical field [0001] The invention relates to a design method of a solid-state storage device, in particular to a fault-tolerant design method of a solid-state storage device. Background technique [0002] At present, solid-state storage devices are gradually accepted by the majority of storage device users. Compared with traditional storage devices, especially hard disks, solid-state storage devices have many incomparable advantages, such as read and write speed, performance, low power consumption and so on. However, its high price and limited storage times restrict the wider application of this type of storage device. [0003] NAND-type Flash particles are currently widely used solid-state storage media, and this type of storage media is used as an example for illustration. This type of storage medium stores information by injecting and erasing the charge of the gate. Due to the manufacturing process, the gate has a certain working life. When the erasing times reach a c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/16
Inventor 王亚轩吴非陈祥
Owner WUHAN SOLIC CZECHOSIOVAKIA DATA SCI & TECH
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