Method for manufacturing memory device

Abstract

The invention discloses a method for manufacturing a memory device, which comprises: providing a substrate with an insulation layer; forming first, second and third conducting layers on the insulation layer; forming a mask on the third conducting layer; etching by using the mask; providing an etched side wall part of the third conducting layer and the etched upper surface of the second conducting layer by the third conducting layer and the second conducting layer of a part of thickness; and forming a lining along the etched side wall part and the etched upper surface.

Description

Technical field [0001] The present invention relates to a flash memory device, in particular to a method of manufacturing a memory device to reduce electrical shorts between word lines. Background technique [0002] In the traditional manufacturing process of flash memory devices, the polysilicon layer is usually etched to form word lines. However, etching polysilicon may produce polysilicon residue between adjacent word lines. Therefore, adjacent word lines will be electrically connected and inoperable memory devices are produced due to these unnecessary polysilicon residues. As a result, there is a need to provide a new method to form word lines that can prevent electrical connections between adjacent word lines and polysilicon residues. [0003] It can be seen that the above-mentioned existing memory device obviously still has inconveniences and defects in the product structure, manufacturing method and use, and further improvement is urgently needed. In order to solve the ab...

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Problems solved by technology

[0004] The present invention can overcome the defects of existing memory devices. An embodiment of the present invention provides a new method for manufacturing a memory device. The technical problem to be solved is to reduce the electrical short circuit between the word lines. very practical

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