Metal film etching solution composition and method for forming conductive pattern using same

A technology of composition and etching solution, which is applied in the direction of surface etching composition, chemical instrument and method, circuit, etc., can solve problems such as poor wiring side profile, wiring bulging or peeling, and no countermeasures are provided to achieve reduction The effects of poor dead pixels and excellent etching characteristics

Active Publication Date: 2018-10-16
DONGWOO FINE CHEM CO LTD
View PDF11 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, since silver (Ag) has extremely poor adhesion to insulating substrates such as glass or semiconductor substrates formed of pure amorphous silicon or doped amorphous silicon, etc., it is difficult to vaporize, and it is easy to cause swelling of wiring. warping or peeling
In addition, when a silver (Ag) film is vapor-deposited on a substrate, an etchant is used for patterning it. However, when a conventional etchant is used, the silver (Ag) may be excessively etched or unevenly etched. Bulking or peeling of the wiring occurs, and the side profile of the wiring becomes poor
[0007] Korean Registered Patent No. 10-0579421 discloses a silver etchant composition, but does not provide countermeasures against the above problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal film etching solution composition and method for forming conductive pattern using same
  • Metal film etching solution composition and method for forming conductive pattern using same
  • Metal film etching solution composition and method for forming conductive pattern using same

Examples

Experimental program
Comparison scheme
Effect test

experiment example

[0143] In order to test the performance of the metal film etchant composition, the following substrates are prepared: an organic insulating film is evaporated on the substrate, and the A substrate with a size of 680mm X 880mm obtained by vapor-depositing ITO / Ag / ITO three-layer film.

[0144] Afterwards, using the metal film etchant compositions of Examples and Comparative Examples, performance tests were performed as follows.

[0145] 1. Determination of critical dimension deviation (CD bias)

[0146] Put the metal film etchant compositions of the above-mentioned examples and comparative examples into the experimental equipment (model: ETCHER, K.C.Tech company) of the jet etching method respectively, set the temperature to 40°C and heat it, and when the temperature reaches 40°C At ±0.1°C, the above-mentioned etching process of the test piece was carried out. The total etching time was set to 100 seconds and implemented.

[0147] Specifically, a photoresist pattern is forme...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The present invention relates to a metal film etching solution composition and a method for forming a conductive pattern using the same, and more particularly, to a metal film etching solution composition comprising: 40 to 60% by weight of phosphoric acid; 3 to 8% by weight of nitric acid; 5 to 20% by weight of acetic acid; 0.1 to 3% by weight of phosphate; and 0.1 to 6 by weight of an anti-adsorbent comprising at least one of a diol-based compound and a compound containing a plurality of phosphate group; and the balance of water, thereby effectively preventing etched metal from being adsorbedon the substrate again. A lower film is not damaged, and the composition has excellent etching characteristics for a film to be etched.

Description

technical field [0001] The present invention relates to a metal film etchant composition and a method for forming a conductive pattern using the composition. Background technique [0002] Examples of flat panel display devices include liquid crystal display devices (Liquid Crystal Display device: LCD), plasma display devices (Plasma Display Panel device: PDP), field emission display devices (Field Emission Display device: FED), electroluminescent Display devices (Electroluminescence Display device: ELD), Organic Light Emitting Diodes (Organic Light Emitting Diodes: OLED), etc., such flat-panel display devices are used not only in the field of home appliances such as TVs and video recorders, but also in computers such as notebook computers and mobile phones. use for various purposes. The reality is that these flat panel display devices are rapidly replacing the conventionally used Braun tube (Cathode Ray Tube (Cathode Ray Tube): NIT) due to their excellent performance such a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/30
CPCC23F1/30H01L27/124H01L21/32134G02F1/13439C09K13/06
Inventor 金镇成金兑勇梁圭亨
Owner DONGWOO FINE CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap