Micro light-emitting diode light-emitting device and micro light-emitting diode chip transfer printing method

A technology of light-emitting diodes and light-emitting devices, which is applied in the manufacture of semiconductor devices, electric solid-state devices, semiconductor/solid-state devices, etc., and can solve the problems of low efficiency of laser removal or replacement preparation

Pending Publication Date: 2022-08-09
SUZHOU CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present application provides a micro-LED light-emitting device and a micro-LED chip transfer method to alleviate the manufacturing efficiency caused by the light-emitting chip that can only be removed or replaced by laser after the light-emitting chip is twisted in the production process of the existing Micro LED light-emitting device. lower technical issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro light-emitting diode light-emitting device and micro light-emitting diode chip transfer printing method
  • Micro light-emitting diode light-emitting device and micro light-emitting diode chip transfer printing method
  • Micro light-emitting diode light-emitting device and micro light-emitting diode chip transfer printing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application.

[0032] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", " rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc., or The positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a micro light-emitting diode light-emitting device and a micro light-emitting diode chip transfer printing method. According to the miniature light-emitting diode light-emitting device, the length of at least one of a first electrode and a second electrode is larger than that of an electrode of a correspondingly connected miniature light-emitting diode chip, and meanwhile the first electrode faces the second electrode in the direction. The maximum distance between different end points of the first electrode and the second electrode is larger than the width of the electrode of the correspondingly connected micro light-emitting diode chip, so that when the micro light-emitting diode chip is twisted, the electrode of the micro light-emitting diode chip can still be normally connected with the first electrode and the second electrode. The possibility that defective pixels appear on the micro light-emitting diode chip is reduced, the first electrode and the second electrode can be repaired by breaking the first electrode and the second electrode when the first electrode and the second electrode are repaired, the repair difficulty is reduced, and the repair efficiency and the preparation efficiency of the micro light-emitting diode light-emitting device are improved.

Description

technical field [0001] The present application relates to the field of display technology, and in particular, to a miniature light emitting diode light-emitting device and a method for transferring a miniature light emitting diode chip. Background technique [0002] Micro LED (miniature light-emitting diode) light-emitting devices are widely used due to their advantages of self-illumination, small size, low power consumption, and fast response speed. In the preparation process of Micro LED light-emitting devices, it is necessary to transfer a large amount of LED chips. In the process of mass transfer, the LED wafer needs to be glued on a temporary carrier plate for laser lift-off of the sapphire substrate first, and then the transfer under the LED is carried out by stamp pick-up or laser release. In the process of stamp pick-up or laser transfer, there are both a laser lift-off process of transferring the LED to the temporary substrate and a process of transferring the LED ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/15H01L21/67H01L33/00H01L33/62
CPCH01L27/156H01L33/0093H01L21/67138H01L33/62
Inventor 吴昊张文兵高峰饶振华夏宇飞
Owner SUZHOU CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap