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Voltage generation circuit

A voltage generation circuit and voltage technology, applied in electrical components, static memory, read-only memory, etc., can solve the problems of large circuit power consumption and dynamic power consumption, and achieve the effect of reducing and limiting power consumption

Inactive Publication Date: 2014-03-12
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

[0007] In fact, figure 2 The oscillator shown in is always in the working state during the entire working process of the voltage generating circuit, and the output of each stage inverter in the internal inverter chain is repeatedly inverted, and the dynamic power consumption is very large, resulting in the entire voltage The power consumption of the generation circuit is large

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Embodiment Construction

[0044] In the voltage generation circuit, the oscillation circuit in the oscillator is always in the state of repeatedly flipping in the working state, and the dynamic power consumption is relatively large, which leads to the large power consumption of the entire voltage generation circuit. Generally, the working voltage of the oscillating circuit is fixed, so in order to reduce its dynamic power consumption, its total working current needs to be reduced. In the prior art, the oscillating circuit is directly connected to the power supply, therefore, its working current is mainly determined by the frequency of the periodic oscillating signal generated by the oscillating circuit and the size of the transistor used. In fact, the size of the transistor determines the delay of each stage of the inverter, thereby determining the oscillation frequency of the periodic oscillating signal, and the size of the transistor is limited by the manufacturing process level. Therefore, the voltag...

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Abstract

A high-voltage regulator includes a charge pump for generating a high voltage, a voltage regulator for generating a regulated voltage, and an oscillator having an oscillation frequency. The voltage regulator includes an operational amplifier having the high voltage as power supply, a first input, a second input coupled to a voltage reference, and an output. The voltage regulator further includes a first transistor having gate coupled to the output of the operational amplifier, a first terminal coupled to the high voltage and a second terminal coupled to a first voltage divider. The first voltage divider generates a first divided voltage that is coupled to the first input of the operational amplifier. The voltage regulator also includes a second voltage divider for providing a second divided voltage, wherein the second divided voltage controls the oscillator frequency.

Description

technical field [0001] The invention relates to a voltage generating circuit. Background technique [0002] Nonvolatile memory (nonvolatile memory) can still maintain internal storage data under the condition of no power supply, so it is more and more widely used. Flash memory (flash memory), as a non-volatile memory, is widely used in memory cards, computers and portable electronic devices. [0003] The programming process of the flash memory is mainly realized through the tunnel injection effect (channel hot electron effect), and the corresponding erasing process is mainly realized through the Fowler-Nordheim (abbreviated as F-N) tunneling effect. During the programming process, a relatively high programming voltage needs to be applied to the memory cell to be programmed (such as the drain of a transistor), and the programming voltage is mainly provided by a voltage generating circuit including a charge pump. [0004] figure 1 A functional module block diagram of a volt...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/30G11C16/10H03H9/00
CPCG11C5/145G11C16/30
Inventor 周永东
Owner SEMICON MFG INT (SHANGHAI) CORP
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