A Single Photon Quenching Circuit Based on FET

A field-effect transistor and single-photon technology, applied in the field of optoelectronic communication, can solve the problems of long quenching and recovery time of passive quenching circuit and short service life of avalanche photodiodes, and achieve short quenching time, fast working speed, The effect of improving detection efficiency

Inactive Publication Date: 2019-09-27
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

[0006] Aiming at the above defects or improvement needs of the prior art, the present invention provides a single-photon quenching circuit based on a field effect tube, thereby solving the problem of the short service life of the avalanche photodiode in the existing active quenching circuit and the existing The technical problem of the quenching and recovery time of the passive quenching circuit is too long

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  • A Single Photon Quenching Circuit Based on FET

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Embodiment Construction

[0022] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0023] The present invention proposes a single-photon quenching circuit for avalanche photodiodes to work in Geiger mode for a long time and adjust avalanche current. By adjusting the duty ratio of the pulse signal, the cut-off and conduction of the field effect tube are realized. When the avalanche current is generated, a voltage drop occurs on the FET and the sliding rheostat, and further, the...

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Abstract

The invention discloses a single-photon quenching circuit based on a field effect transistor. The circuit comprises a first NMOS tube, a second NMOS tube, an avalanche photodiode APD, a sliding resistor R and a sampling resistor R0. The cathode of the APD is connected with the R. The anode of the APD is connected with the R0 and one end of an amplifier. The R0 is connected with the drain electrodeof the first NMOS tube. The R is connected with the source electrode of the second NMOS tube. The source electrode of the first NMOS tube is grounded. The drain electrode of the second NMOS is connected with a high voltage bias power supply. The grid electrode of the first NMOS tube and the grid electrode of the second NMOS tube are connected with pulse signals. An avalanche signal is output by an amplifier. By adjusting the resistance value of the sliding resistor, working current can be effectively reduced; power consumption is reduced; by use of the MOSFET tubes, self-quenching processes of single photon can be achieved. The quenching circuit is simple in structure and fast in response speed. The working current can be effectively limited. Achievement of integration of avalanche photodiodes in large scale is facilitated.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic communication, and more specifically relates to a single photon quenching circuit based on a field effect tube. Background technique [0002] Single-photon detection is an extremely weak detection method. The photocurrent intensity detected by it is lower than the thermal noise level of the photodetector itself at room temperature. The signal that is buried in the noise cannot be eliminated by the usual DC detection method. Extract it. Single-photon detection technology uses the new photoelectric effect. When the incident photon signal hits the avalanche photodiode, a large current is generated through the impact ionization effect, thereby amplifying the carriers to an observable level and forming a comparison This is the basic principle of single photon detection technology. [0003] Due to the characteristics of high detection efficiency, low power consumption and high sensitivity, aval...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J11/00
Inventor 赵彦立王润琦田育充
Owner HUAZHONG UNIV OF SCI & TECH
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