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Thin film transistor

A technology of thin-film transistors and semiconductors, which is applied in the direction of transistors, electric solid-state devices, semiconductor devices, etc., and can solve problems such as taking care of one thing and losing another, and deterioration of the properties of thin-film transistors.

Active Publication Date: 2011-07-06
LG DISPLAY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, if the electrical conductivity is lowered to suppress the leakage current in the back channel region, the electrical conductivity in the channel region is also lowered, thereby deteriorating the properties of the thin film transistor
[0011] In this way, when the semiconductor layer is completely made of the same material such as oxide, there is a trade-off between the channel region and the back channel region, which limits the improvement of the operating properties of the thin film transistor having the semiconductor layer.

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Embodiment Construction

[0027] A thin film transistor (TFT) according to various embodiments of the present invention will be described below with reference to the accompanying drawings.

[0028] A thin film transistor (TFT) according to one embodiment of the present invention includes a gate, a gate insulating film, an oxide semiconductor layer, and a source and a drain separated from each other. The oxide semiconductor layer is defined by a channel region and a back channel region.

[0029] The semiconductor layer can be made of ZnO, Ga 2 o 3 、In 2 o 3 or a combination thereof.

[0030] When the channel region of the semiconductor layer is arranged in the lower part, the lower part of the semiconductor layer contains more Zn or In (mol %) than Ga (mol %) to increase the conductivity of the channel region, while the back channel region is arranged The upper portion of the semiconductor layer contains more Ga (mol %) than Zn and In (mol %) to reduce the conductivity of the back channel region. ...

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Abstract

A thin film transistor for increasing the conductivity of a channel region and suppressing the leakage current of a back channel region, and a display device including the thin film transistor, are discussed. According to an embodiment, the thin film transistor includes a gate electrode arranged on a substrate, a source electrode and a drain electrode spaced from each other on the substrate, a gate insulating film to insulate the gate electrode from the source electrode and the drain electrode, and a semiconductor layer insulated from the gate electrode through the gate insulating film, wherein the semiconductor layer includes a channel region and a back channel region, the semiconductor layer is made of (In2O3)x(Ga2O3)y(ZnO)z(0 <=x <=5, 0 <=y <=5, 0 <=z <=5), wherein X or Z is greater than Y in the channel region of the semiconductor layer, and Y is greater than X and Z in the back channel region of the semiconductor layer.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2009-0135447 filed on December 31, 2009, which is hereby incorporated by reference as if fully set forth herein. technical field [0003] The present invention relates to thin film transistors, and more particularly, the present invention relates to thin film transistors for increasing electrical conductivity of a channel region and suppressing leakage current of a back channel region. Background technique [0004] With the increasing demand for various forms of display devices for information-dependent users, a large number of applications such as liquid crystal displays (LCDs), plasma display panels (PDPs), electroluminescence displays (ELDs), field emission displays ( Research on flat panel display devices such as FEDs) and vacuum fluorescent displays (VFDs) is actively being conducted. [0005] A thin film transistor (TFT) having a channel regi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/12H01L27/02
CPCH01L29/7869H01L29/06H01L29/26
Inventor 许宰硕徐知延
Owner LG DISPLAY CO LTD