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Solar cell having quantum dot nanowire array and the fabrication method thereof

A technology of nanowire arrays and solar cells, which is applied in the direction of nanotechnology, final product manufacturing, sustainable manufacturing/processing, etc., and can solve the problems of high manufacturing cost and large-scale use of solar cells

Inactive Publication Date: 2011-07-06
KOREA RES INST OF STANDARDS & SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] n-p diodes, mainly using inorganic semiconductor materials such as silicon or gallium arsenide (GaAs), have proven their stability and effectiveness, however, their high manufacturing cost has been a hindrance to the mass adoption of solar cells

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  • Solar cell having quantum dot nanowire array and the fabrication method thereof
  • Solar cell having quantum dot nanowire array and the fabrication method thereof
  • Solar cell having quantum dot nanowire array and the fabrication method thereof

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Embodiment Construction

[0047] Hereinafter, a solar cell having a quantum dot nanowire array and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings. The accompanying drawings listed herein are provided so that those skilled in the art may fully understand the present invention. Accordingly, the invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. All like reference numbers refer to like elements.

[0048] At this time, if the technical and scientific terms used herein are not specifically defined, the terms have meanings commonly understood by those skilled in the art to which the present invention belongs. In the following description and drawings, if it is judged that a specific description of a related well-known function or structure may obscure the gist of the present invention, its detailed description will be omitted.

[0049] figure ...

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Abstract

The present invention relates to a solar cell having quantum dot nanowire array and the fabrication method thereof. The solar cell according to the present invention includes quantum dot nanowire array with a heterostructure including matrix and semiconductor quantum dots, and p-type and n-type semiconductor and electrodes each contacting the quantum dot nanowires. With the solar cell according to the present invention, the band gap energy of the semiconductor quantum dot can be easily controlled, the semiconductor quantum dots having different sizes are provided in the quantum dot nanowire so that the photoelectric conversion can be performed in the wide spectrum from visible rays to infrared rays, the quantum dot is embedded in the high density quantum dot nanowire array so that light absorption can be maximized, and the quantum dot nanowire contact p-type and n- type semiconductor over a wide area, conduction efficiency of electrons and holes can be improved.

Description

technical field [0001] The present invention relates to a solar cell having a quantum dot nanowire array and a method of manufacturing the same, and more particularly, to a solar cell having a quantum dot nanowire array embedded with semiconductor quantum dots and a method of manufacturing the same. Background technique [0002] Due to the targeting of carbon dioxide (CO2), which is thought to be responsible for global warming 2 ) emissions of the Kyoto Protocol has been formally passed in December 1997, in order to reduce carbon dioxide (CO 2 ), research into renewable and clean alternative energy sources such as solar energy, wind power, and water power has been actively conducted. [0003] Photovoltaic devices (solar cells), which are attracting attention as clean alternative energy sources, are devices that generate current-voltage using the photoelectric effect (semiconductors absorb light to generate electrons and holes). [0004] n-p diodes, mainly using inorganic s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042
CPCH01L31/1804H01L27/1446H01L31/035272H01L31/028Y02E10/50Y02E10/547Y02P70/50B82Y40/00H01L31/042H01L31/18
Inventor 金庆中李雨
Owner KOREA RES INST OF STANDARDS & SCI
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