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Method for acquiring total number of cut rectangles of PBOPC (Pixel-Based Optical Proximity Correction) optimal mask pattern

A technology of mask pattern and acquisition method, applied in the field of lithography resolution enhancement, can solve the problems of inability of imaging resolution and global optimization of mask manufacturing cost, difficult to obtain analytical expressions, inapplicability, etc., and achieve imaging resolution. and the effect of global optimization of mask manufacturing cost

Inactive Publication Date: 2012-07-04
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Abstract
  • Description
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Problems solved by technology

[0008] There are the following two deficiencies in the above method: the first, # (string) in the above formula 1 It is difficult to find the analytical expression of
Second, the above formula is only applicable to the case where the mask contains only one straight polygon. When the mask contains multiple straight polygons, this method is not applicable
It can be seen that since the existing technology cannot approximate the total number of segmentation rectangles that express the mask pattern, it is impossible to effectively optimize the imaging resolution and mask manufacturing cost globally

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  • Method for acquiring total number of cut rectangles of PBOPC (Pixel-Based Optical Proximity Correction) optimal mask pattern
  • Method for acquiring total number of cut rectangles of PBOPC (Pixel-Based Optical Proximity Correction) optimal mask pattern
  • Method for acquiring total number of cut rectangles of PBOPC (Pixel-Based Optical Proximity Correction) optimal mask pattern

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Embodiment Construction

[0033] According to the definition of "string", if there is a "chord" after the mask graph is divided, then the mask graph must meet the following two necessary conditions: first, at least two concave vertices in a certain polygon of the mask have The same abscissa x or ordinate y; second, the line between these two concave vertices does not intersect with other polygon edges. However, during the PBOPC optimization process, any pixel on the mask may be flipped, so the mask pattern optimized by PBOPC will meet the above two necessary conditions with a small probability. In other words, if the mask pattern optimized by PBOPC is segmented, then the number of "chords" in the segmented mask pattern is small, then:

[0034] S 1 =# (concave vertex) 1 -#(string) 1 +1≈#(concave vertex) 1 +1.

[0035] According to the above approximate relationship assumptions

[0036] S 1 =# (concave vertex) 1 +1.

[0037] The above relationship is for the case where there is only one straight...

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Abstract

The invention provides a method for acquiring the total number of cut rectangles of a PBOPC (Pixel-Based Optical Proximity Correction) optimal mask pattern. The method comprises the following steps of: 1, designing a topological filter g; 2, calculating the convolution of the topological filter g with each pixel point M (x, y) in the current mask pattern; 3, calculating the number of convex vortexes and concave vortexes in the current mask pattern according to the GM (x, y); and 4, calculating the total number S of cut rectangles of the current mask pattern according to the calculated number of the convex vortexes and concave vortexes. The total number of the cut rectangles of the mask pattern can be approximately calculated by utilizing the number of the convex vortexes and the concave vortexes in the mask pattern, so that effective global optimization on the imaging resolution and mask manufacture cost of a photoetching system can be realized.

Description

technical field [0001] The invention relates to a method for obtaining the total number of division rectangles of a PBOPC optimized mask pattern, and belongs to the technical field of photolithographic resolution enhancement. Background technique [0002] The current large-scale integrated circuits are generally manufactured using photolithography systems. The lithography system is mainly divided into four parts: illumination system (light source), mask, projection system and wafer. The light emitted by the light source is focused by the condenser and then enters the mask, and the opening part of the mask transmits light; after passing through the mask, the light enters the wafer through the projection system; thus, the mask pattern is copied on the wafer. [0003] The current mainstream lithography system is the 193nm ArF deep ultraviolet lithography system. As the lithography technology node enters 45nm-22nm, the critical dimension of the circuit has been much smaller th...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/36
Inventor 马旭李艳秋
Owner BEIJING INSTITUTE OF TECHNOLOGYGY