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Method for growing sapphire crystal

A sapphire crystal and crystal technology, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem that the temperature gradient method cannot grow large-sized sapphire crystals, etc., to avoid design problems, high temperature damage defects, and high cost defects. Effect

Active Publication Date: 2012-09-05
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for growing sapphire crystals, to solve the problem that the temperature gradient method cannot grow large-sized sapphire crystals and the design of the temperature field, and to avoid internal defects caused by the descending method of crystal growth, so as to meet the requirements of sapphire crystals for LED substrates. performance requirements

Method used

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  • Method for growing sapphire crystal
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  • Method for growing sapphire crystal

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Embodiment 1

[0026] Sapphire crystal growth is carried out using the above-mentioned directional solidification descent method growth technology and special temperature field: the conical molybdenum crucible with a seed crystal groove in the center of the bottom has a size of Ф160×200mm, and the graphite heating element is cylindrical. Molybdenum cylinder lined with tungsten flakes; seed orientation Put it into the seed crystal tank of the crucible, pre-fire the high-purity alumina with a purity of 99.99% at 1800°C, and then heat it at 4t / cm 2 After being forged into blocks under isostatic pressure, put them into crucibles, and place them together in a special temperature field drop furnace. The system is sealed and vacuumed to 1×10 -3 Pa, start to heat up to 1600°C, fill in high-purity argon as a protective gas to a system positive pressure of 12Kpa; continue to heat up to 2060°C at the bottom of the crucible (point B), keep the temperature constant for 4 hours, the raw materials are com...

Embodiment 2

[0028] Sapphire crystal growth is carried out using the above-mentioned directional solidification descent method growth technology and special temperature field: the conical molybdenum crucible with a seed crystal groove in the center of the bottom has a size of Ф180×240mm, and the graphite heating element is cylindrical. Molybdenum cylinder lined with tungsten flakes; seed orientation Put it into the seed crystal tank of the crucible, pre-fire the high-purity alumina with a purity of 99.99% or above at 1800°C, and then heat it at 4t / cm 2 After being forged into blocks under isostatic pressure, put them into crucibles, and place them together in a special temperature field drop furnace. The system is sealed and vacuumed to 0.8×10 -3 Pa, start to heat up to 1700°C, fill high-purity argon as a protective gas to a system positive pressure of 15Kpa; continue to heat up to 2070°C at the bottom of the crucible (point B), keep the temperature for 4 hours, the raw materials are comp...

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Abstract

The invention discloses a method for growing sapphire crystal, which is a directional solidification and descending method, comprising the following steps of: at the growth initial stage of the sapphire crystal, growing at the bottom of a melt in a directional solidification method, uniformly cooling the temperature field, moving the growing solid-liquid interface from bottom to top, and gradually growing the crystal; at the growth mid-later stage of the sapphire crystal, starting a descending device to uniformly descend a crucible in a certain speed; after finishing the growth of the crystal, slowly cooling the temperature to room temperature, and then taking the crystal out. The growing technique adopting the directional solidification and descending method successfully integrates the directional solidification method and the descending method, effectively inherits the advantages of the two methods and also obviously improves the defects of the two growing techniques; and the growing technique not only can be used for growing large-size and high-quality sapphire crystal materials for LED substrates, but also improves the growing yield of the sapphire crystal, and reduces the growing cost of the sapphire crystal.

Description

technical field [0001] The invention relates to a method for growing a sapphire crystal, in particular to a method for growing a large-sized, high-quality sapphire crystal, and belongs to the technical field of crystal growth. Background technique [0002] Sapphire substrate, as a key material in the LED field, its large size, high quality, and low-cost growth has become the biggest difficulty in the development of the industry. Developed countries in the world have invested a lot of money in research and development of sapphire crystal growth technology. Due to the late start of research in this field in my country, compared with Japan, the United States, Russia and other countries, the technology is relatively backward. For the growth of large-size and high-quality sapphire crystals for LED substrates, the technology is still not mature and stable enough. The demand for sapphire substrates, especially large-size, high-quality sapphire substrate materials, is expanding rapid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/20C30B11/00
Inventor 李红军胡克艳徐军郭鑫苏良碧陈伟超钱小波唐慧丽
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI