AlN layer and preparation method thereof

Abstract

The invention discloses an AlN layer and a preparation method thereof, and the method comprises the steps: carrying out the n times of heating treatment of a substrate layer in a vacuum drying oven, processing the substrate layer in the vacuum drying oven at a first temperature for a first time, and continuously processing the substrate layer in the vacuum drying oven at a second temperature for a second time until the substrate layer is processed in the vacuum drying oven at an nth temperature for an nth time; n is a positive integer; putting the substrate layer treated for the nth time length into a temperature reaction chamber at a specific temperature to be treated for a first specific time length; the substrate layer processed for the first specific duration is processed with constant sputtering power and constant sputtering voltage; and when the substrate layer treated for the first specific time length is treated at constant sputtering power and constant sputtering voltage, nitrogen, argon and oxygen are introduced into the substrate layer, so that the AlN layer is obtained within a second specific time length. The AlN layer prepared according to the technical scheme disclosed by the invention is uniform in surface, and the surface roughness of the AlN layer can be well matched with an LED epitaxial wafer.

Description

technical field [0001] The present application relates to the technical field of light-emitting diode (Light-emitting diode, LED) chip epitaxial growth, and specifically relates to an AlN layer and a preparation method thereof. Background technique [0002] LED is a new type of energy-saving and environment-friendly lighting source. Due to its advantages of low energy consumption, fast response speed and long service life, LED has been widely used in many fields. In the LED manufacturing process, the problems of lattice mismatch and thermal mismatch in the LED manufacturing process can be well solved by setting the AlN buffer layer. [0003] In the prior art, the AlN layer is usually prepared by changing the doping amount of oxygen in sputtering coating, or by ion beam assisted deposition technology. [0004] The method of preparing the AlN layer in the prior art has the problems of poor uniformity in the growing epitaxial wafer caused by uneven aluminum plating and the pro...

AI Technical Summary

Problems solved by technology

[0004] The method of preparing the AlN layer in the prior art has the problem of poor uniformity in the growing epitaxial wafer caused by uneven aluminum plating and the problem that the surface roughness cannot match the epitaxial wafer well.

Images