Pipeline system for recycling heat energy of crystal growth furnace

Abstract

The invention discloses a pipeline system for recycling heat energy of a crystal growth furnace, which comprises a gas pipeline for introducing process gas and an evacuation pipeline for discharging waste gas, the evacuation pipeline is sleeved on the outer side of the gas pipeline, and a gas inlet and a gas outlet of the gas pipeline are positioned outside the evacuation pipeline. The waste gas in the evacuation pipeline is used for preheating the process gas in the gas pipeline, and the preheated process gas has smaller influence on the hearth temperature, so that local supercooling caused by cold gas filling is avoided, the yield of crystal growth is increased, the temperature of a thermal field is more controllable, and a result is closer to a simulation result. After the waste gas exhausted out of the hearth is subjected to heat exchange with the cold process gas, the temperature is reduced to a certain extent, and then the harmful effect on the greenhouse effect of the atmosphere is reduced by exhausting the waste gas. In the aspect of structure, the evacuation pipeline and the gas pipeline are of an integrated structure which is different from a conventional split structure, so that the number of holes formed in the equipment is reduced, and the equipment structure is more compact.

Description

technical field [0001] The invention relates to a semiconductor crystal growth device, in particular to a pipeline system for reusing heat energy of a crystal growth furnace. Background technique [0002] Various atmospheres such as vacuum, hydrogen, oxygen, nitrogen and inert gases (such as argon) are commonly used in vacuum atmosphere furnaces. Most semiconductor single crystal furnaces are high-temperature furnaces. Taking silicon carbide and silicon single crystal furnaces as examples, the core temperatures of the thermal fields are 2300°C and 1400°C respectively. During the crystal growth process at high temperature, the radial uniformity of the thermal field directly affects Crystal growth quality. Various types of vacuum furnaces such as silicon carbide single crystal furnaces and silicon single crystal furnaces need to be fed with process gas during the crystal growth stage. The furnace temperature will be very high at this stage, but at this moment, the temperature...

AI Technical Summary

Problems solved by technology

Various types of vacuum furnaces such as silicon carbide single crystal furnaces and silicon single crystal furnaces need to be fed with process gas during the crystal growth stage. The furnace temperature will be very high at this stage, but at this moment, the temperature of the furnace filled from the air inlet is room temperature. The highest process gas is only 35°C. A large amount of cold air entering the furnace will instantly destroy the uniformity of the thermal field, causing the temperature of the furnace to drop instantly or even partially overcool, affecting the temperature gradient and resulting in uneven temperature in the thermal field. The quality of growing crystal

Moreover, the evacuated gas in the furnace is directly discharged out of the factory building through the exhaust pipe, which cannot be reused and wastes energy. A large amount of high-temperature exhaust gas will be discharged into the atmosphere, which will affect the greenhouse effect of the atmosphere.

[0003] In addition, a single air inlet will cause the atmosphere in the hot field to be uneven. Since the crystal growth furnace cannot carry out stirring and wind circulation, it will cause high local concentration and low concentration at places far away from the air pipe. The process gas inside the hot field will not Uniform, only after a long filling stage can the atmosphere in the furnace be uniform, which will affect the quality of the crystal growth

[0004] Before the semiconductor single crystal furnace is put into use, the structure and power of the thermal field are determined through very accurate simulation and calculation, but the simulation of the influence of the inert gas with low temperature cannot be controlled, which increases the risk of uncontrollability and affects the crystal. The production environment has a crucial impact

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