Container with hole for continuous monocrystalline silicon growth and design method for hole
A design method, single crystal silicon technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high production cost, large modification, etc., and achieve the effect of improving growth yield
Pending Publication Date: 2020-11-24
LIANCHENG KEKESI TECH CO LTD
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Problems solved by technology
[0005] However, in the prior art, the modification of the existing container by adding some structures such as weirs, rings, and buffer zones is relatively large, and the production cost is relatively high.
Method used
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Effect test
Embodiment 1
[0061] When the purity of the silicon material is ≧99.9999999% and the growth rate K=8kg / h, the cross-sectional area of the through hole 4 is 20mm 2 (5 mm in diameter), the upper edge of the through hole 4 is located 50 mm below the melt level in the crucible, and the crystal growth yield reaches 93%.
Embodiment 2
[0063] When the purity of the silicon material is ≧99.9999999% and the growth rate K=8kg / h, the cross-sectional area of the through hole 4 is 5024mm 2 (diameter is 80mm) (see attached figure 2 , the size of the through hole 4 is omitted in the remaining embodiments), the upper edge of the through hole 4 is located 50 mm below the melt level in the crucible, and the crystal growth yield reaches 15%.
Embodiment 3
[0065] When the purity of the silicon material is ≧99.9999996% and the growth rate K=9kg / h, the cross-sectional area of the through hole 4 is 0.1mm 2 (0.35 mm in diameter), the upper edge of the through hole 4 is located 50 mm below the melt level in the crucible, and the crystal growth yield reaches 28%.
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Abstract
The invention provides a container with a hole for continuous monocrystalline silicon growth and a design method for the hole. The container comprises a container wall arranged in a total melt space,wherein a crystal growth area is formed in a space enclosed by the container wall; the crystal growth area is coaxial with the total melt space; at least one through hole is processed on the containerwall; the through hole is used for a melt in the total melt space to enter the crystal growth area and located below the liquid level of the melt in the crystal growth area; and the cross sectional area S of the through hole is larger than or equal to 0.1 mm<2> and smaller than or equal to 5024 mm<2>. According to the invention, the through hole is arranged on the container wall, so the crystal growth area is separated; unmelted impurity points outside the crystal growth area can not enter a crucible; and the melt is supplemented through the through hole. Through the size of the through hole,the growth yield of a single crystal is better improved.
Description
technical field [0001] The invention relates to the technical field of continuous Czochralski single crystal, in particular to a container with holes for continuous single crystal silicon growth and a design method for the holes. Background technique [0002] The obvious feature of the continuous Czochralski (CCz) process technology is that the material is melted while growing the crystal, which can save the time required for the materialization of the ordinary Czochralski single crystal. But at the same time, in the chemical process, there may be some impurity points that are not fully melted, enter the melt, and bring the crystal growth interface with the melt flow, and cause the crystal structure of the single crystal to be destroyed. [0003] In the CCz technology, the melt is generally divided into three regions during crystal growth: chemical material region, buffer zone and crystal growth region. In order to achieve dislocation-free growth of single crystals, it is n...
Claims
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IPC IPC(8): C30B15/10C30B15/02C30B29/06
CPCC30B15/10C30B15/02C30B15/002C30B29/06
Inventor 黎志欣逯占文李军孔德东曹玉宝
Owner LIANCHENG KEKESI TECH CO LTD