Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Process monitoring method and device for channel MOS devices

A technology of MOS devices and monitoring devices, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, electrical components, etc., and can solve problems such as poor monitoring effect and inability to detect device process drift.

Active Publication Date: 2011-08-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The problem solved by the present invention is that the monitoring effect of the process monitoring method of the trench MOS device in the prior art is poor, and the process drift problem of the device cannot be detected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process monitoring method and device for channel MOS devices
  • Process monitoring method and device for channel MOS devices
  • Process monitoring method and device for channel MOS devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] In the prior art, when monitoring the process of trench MOS devices, the monitoring point is often selected before the soft breakdown point or after the hard breakdown point, and the relationship between the gate voltage and the gate leakage current is not obvious. The process drift of the device may not be detected, and the monitoring effect is poor.

[0033] This technical solution applies a detection voltage to the gate of the trench MOS device to be monitored and detects its gate leakage current, and the voltage value of the detection voltage is between the gate voltage of the soft breakdown point and the hard breakdown point , or apply a detection current to the gate of each trench MOS device and detect its gate voltage, the current value of the detection current is between the gate leakage current at the soft breakdown point and the hard breakdown point . In this technical solution, the monitoring point is selected in the part between the soft breakdown point and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a process monitoring method and device for channel MOS devices. The method comprises the following steps of: determining the grid voltage and / or the grid leakage current of the soft breakdown point and the hard breakdown point of the batch of MOS devices; and applying detection voltage to the grid electrodes of the batch of channel MOS devices to be monitored, detecting the grid leakage current of the grid electrodes of the batch of channel MOS devices, and causing the voltage value of the detection voltage to range between the grid voltage of the soft breakdown point and that of the hard breakdown point, or applying detection current to the grid electrode of each channel MOS device, detecting the grid voltage of the grid electrode of each channel MOS device, and causing the value of the detection current to range between the grid leakage current of the soft breakdown point and that of the hard breakdown point. The invention can improve the process monitoring effect, and accurately detect the problem of process drift of the devices.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a process monitoring method and device for a trench type MOS device. Background technique [0002] With the continuous development of semiconductor technology, a power device (Power Device), as a new type of device, is widely used in fields such as disk drives and automotive electronics. Power devices need to be able to withstand large voltage, current and power loads. For example, the output rectifier is required to be able to input 20V voltage and output about 3.3V voltage and input 10V voltage and output about 1.5V voltage; and it is required to have a range of 10V to 50V failure voltage. However, existing MOS transistors and other devices cannot meet the above requirements. For example, the exhaustion voltage range of Schottky diodes is about 0.5V. Therefore, in order to meet the needs of applications, various power devices have become the focus of attention. [0003...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L21/336
Inventor 刘宪周
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com