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Process monitoring method and device for trench mos devices

A technology for MOS devices and monitoring devices, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, electrical components, etc., and can solve problems such as poor monitoring effect and inability to detect device process drift.

Active Publication Date: 2016-03-30
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The problem solved by the present invention is that the monitoring effect of the process monitoring method of the trench MOS device in the prior art is poor, and the process drift problem of the device cannot be detected

Method used

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  • Process monitoring method and device for trench mos devices
  • Process monitoring method and device for trench mos devices
  • Process monitoring method and device for trench mos devices

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Embodiment Construction

[0032] In the prior art, when monitoring the process of trench MOS devices, the monitoring point is often selected before the soft breakdown point or after the hard breakdown point, and the relationship between the gate voltage and the gate leakage current is not obvious. The process drift of the device may not be detected, and the monitoring effect is poor.

[0033] This technical solution applies a detection voltage to the gate of the trench MOS device to be monitored and detects its gate leakage current, and the voltage value of the detection voltage is between the gate voltage of the soft breakdown point and the hard breakdown point , or apply a detection current to the gate of each trench MOS device and detect its gate voltage, the current value of the detection current is between the gate leakage current at the soft breakdown point and the hard breakdown point . In this technical solution, the monitoring point is selected in the part between the soft breakdown point and...

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Abstract

The invention relates to a process monitoring method and device for channel MOS devices. The method comprises the following steps of: determining the grid voltage and / or the grid leakage current of the soft breakdown point and the hard breakdown point of the batch of MOS devices; and applying detection voltage to the grid electrodes of the batch of channel MOS devices to be monitored, detecting the grid leakage current of the grid electrodes of the batch of channel MOS devices, and causing the voltage value of the detection voltage to range between the grid voltage of the soft breakdown point and that of the hard breakdown point, or applying detection current to the grid electrode of each channel MOS device, detecting the grid voltage of the grid electrode of each channel MOS device, and causing the value of the detection current to range between the grid leakage current of the soft breakdown point and that of the hard breakdown point. The invention can improve the process monitoring effect, and accurately detect the problem of process drift of the devices.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a process monitoring method and device for a trench type MOS device. Background technique [0002] With the continuous development of semiconductor technology, a power device (PowerDevice), as a new type of device, is widely used in fields such as disk drives and automotive electronics. Power devices need to be able to withstand large voltage, current and power loads. For example, the output rectifier is required to be able to input 20V voltage and output about 3.3V voltage and input 10V voltage and output about 1.5V voltage; and it is required to have a range of 10V to 50V failure voltage. However, existing MOS transistors and other devices cannot meet the above requirements. For example, the exhaustion voltage range of Schottky diodes is about 0.5V. Therefore, in order to meet the needs of applications, various power devices have become the focus of attention. [0003]...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/336
Inventor 刘宪周
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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