Random walk based solid state disk abrasion balancing method

A solid-state drive, random walk technology, applied in static memory, memory address/allocation/relocation, instruments, etc., to improve performance and save memory resource consumption

Active Publication Date: 2013-03-20
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is: how to evenly distribute the write operations in the large-capacity solid-state hard disk to each storage unit, and at the same time save the memory resource consumption of the solid-state hard disk, and improve performance

Method used

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  • Random walk based solid state disk abrasion balancing method
  • Random walk based solid state disk abrasion balancing method
  • Random walk based solid state disk abrasion balancing method

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Embodiment Construction

[0038] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0039] In order to achieve the purpose of the above invention, the present invention provides a wear leveling design using the random walk mechanism and the idea of ​​data grouping, the flow chart is as follows figure 1 shown, including:

[0040] Step S101, calculate the mathematical expectation E and the variance Var of the erasing times for each physical block group according to the erasing times recorded in the physical blocks of the solid-state hard disk, and store the mathematical expectation E and the variance Var of each physical block in the solid state In the metadata table in the controller memory of the hard disk, the intra-block pointer of each physical block ...

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Abstract

The invention discloses a random walk based solid state disk abrasion balancing method which comprises the steps of: S1, calculating a mathematic expectation E and a variance Var of rewritable times for each physical block group according to rewritable times recorded in physical blocks of a solid disk, storing the mathematic expectation E and the variance Var in a metadata table in a controller memory of the solid disk, wherein the metadata table stores inter-block points of each physical block group; S2, sequencing the physical block groups according to the mathematic expectation E, and selecting a target physical block group by means of the variance Var; S3, selecting a target physical block from the target physical block group by using a random walk mechanism; and S4, writing data to be written into the target physical block, updating rewritable times of the target physical block, updating the mathematic expectation E and the variance Var of the physical block group where the target physical block is in, and skipping to the S2 for continuously executing the operation. Write operations are uniformly distributed in each storage unit, consumption of memory resources of the solid disk is reduced, and property is improved.

Description

technical field [0001] The invention relates to the technical field of computer storage, in particular to a random walk-based solid state disk wear leveling method. Background technique [0002] Due to the large difference between the speed of the disk and the speed of the memory and CPU, the performance of the disk has gradually become one of the main bottlenecks hindering the development of computer systems. Flash memory, also known as flash memory (flash memory), has the advantages of low energy consumption, non-volatile, strong physical stability such as shock resistance, and easy plug-in and move. In recent years, the capacity of solid-state hard drives using flash memory as the medium has gradually increased, and their prices have gradually decreased. They have replaced disks and become the new mainstream external storage medium, which may lead to a revolution in storage systems. Due to the write limit of the storage unit of flash memory, the maximum number of erasing...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/00G06F12/02
Inventor 胡事民赵鹏
Owner TSINGHUA UNIV
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