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Microlithography projection exposure apparatus having at least two operating states

An operating state, microlithography technology, applied in microlithography exposure equipment, optomechanical equipment, photolithography process exposure devices, etc., can solve problems such as shadow effects

Inactive Publication Date: 2012-08-08
CARL ZEISS SMT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, this three-dimensional structure of the mask may lead to shadowing effects

Method used

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  • Microlithography projection exposure apparatus having at least two operating states
  • Microlithography projection exposure apparatus having at least two operating states
  • Microlithography projection exposure apparatus having at least two operating states

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Embodiment Construction

[0041] The reference signs are chosen such that figure 1 Objects shown in have been provided with single-digit or two-digit designations. Objects shown in other figures have reference numbers comprising three or more digits, where the last two digits designate the object and the digits preceding them designate the number of the figure in which the object is shown. Accordingly, reference numerals for identical objects shown in multiple figures are identical in the last two digits. For example, reference numerals 3 and 403 identify figure 1 and object 3 in Fig. 4, in this case the object field. Accordingly, a description of an object with a reference number can be found in the description referring to the object under the corresponding reference number in the preceding figures.

[0042] figure 1 A schematic representation of a reflective projection optics unit 1 of a microlithographic projection exposure apparatus such as is known from the prior art is shown. The projection...

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Abstract

The present invention relates to a microlithography projection exposure apparatus for producing microelectronic components having at least two operating states. The microlithography projection exposure apparatus comprises a reflective mask in an object plane. In the first operating state a first partial region of the mask is illuminated by a first radiation, which has an assigned first centroid direction having a first centroid direction vector at each point of the first partial region. In the second operating state a second partial region of the mask is illuminated by a second radiation, which has an assigned second centroid direction having a second centroid direction vector at each point of the second partial region. The first and the second partial region have a common overlap region.The microlithography projection exposure apparatus is configured in such a way that at each point of at least one partial region of the overlap region the scalar triple product of the normalized first centroid direction vector, the normalized second centroid direction vector and a normalized vector that is perpendicular to the mask is less than 0.05.

Description

technical field [0001] The invention relates to a microlithographic projection exposure apparatus having at least two operating states for producing microelectronic components, and to a method for producing microelectronic components by photolithography. Background technique [0002] Microlithographic projection exposure apparatus and methods of the type mentioned in the introduction are disclosed, for example, in US 6,295,119 B1 and US 6,526,118 B2. [0003] A microlithographic projection exposure apparatus for the manufacture of microelectronic components comprises a light source and an illumination system for illuminating a structure-bearing mask (so-called reticle) and a projection optics unit for imaging the mask onto a substrate (wafer), wait. The substrate contains a photosensitive layer that is chemically altered upon exposure. This is also called a photolithography step. In this case, the reticle is arranged in the object plane and the wafer is arranged in the im...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/70191G03F7/70475G03F7/70283
Inventor 汉斯-于尔根.曼温弗里德.凯泽
Owner CARL ZEISS SMT GMBH