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Photosensitive chip encapsulation structure and manufacturing method thereof

A photosensitive chip and chip packaging technology, applied in radiation control devices and other directions, can solve the problems of insufficient light intensity and complicated processes

Inactive Publication Date: 2011-09-07
XINTEC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the layout of the metal interconnection in the interconnection layer 84 must avoid the top of the photosensitive chip 81, so as to avoid the reflection of light from the metal layer (not shown) as the metal interconnection and reduce the sensing of the photosensitive chip 81. Light intensity, so the process is more complicated
[0007] In addition, the dielectric layer (not shown) in the interconnection layer 84 will also block part of the incident light (that is, absorb or reflect light), so that the intensity of the light in the interconnection layer 84 will gradually attenuate, thereby causing Insufficient light intensity sensed by photosensitive chip 81

Method used

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  • Photosensitive chip encapsulation structure and manufacturing method thereof
  • Photosensitive chip encapsulation structure and manufacturing method thereof
  • Photosensitive chip encapsulation structure and manufacturing method thereof

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Embodiment Construction

[0065] The features of the present invention can be clearly understood by referring to the drawings and detailed descriptions of the embodiments of the present application.

[0066] The "photosensitive chip packaging structure and its manufacturing method" of the present invention, the basic structure of the photosensitive chip packaging structure 10 is as follows figure 1 As shown, it contains at least:

[0067] The wafer 1 is provided with first and second surfaces 11 , 12 , and the first surface 11 is bonded with several photosensitive chips 3 through the bonding layer 2 .

[0068] A plurality of photosensitive chips 3 with intervals 31 between each photosensitive chip 3 are arranged on the first surface 11 of the wafer 1 through a bonding layer 2 , and a color filter array 4 is arranged above each photosensitive chip 3 .

[0069] The color filter array 4 is respectively arranged above each photosensitive chip 3 by using the bonding layer 2 .

[0070] The glass substrate...

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Abstract

The invention provides a photosensitive chip encapsulation structure and a manufacturing method thereof. A photosensitive chip is formed on one side of a wafer by use of a jointing layer; a color filtering array is arranged above the photosensitive chip; a glass substrate with weir is also formed and covers above the color filtering array; and meanwhile, a proper gap is formed between the glass substrate and the color filtering array, and the photosensitive chip formed on the wafer directly receives light so as to increase the light penetration rate.

Description

[0001] This application is a divisional application of an application with a filing date of February 1, 2007, an application number of 200710007981.2, and an invention title of "Photosensitive Chip Packaging Structure and Manufacturing Method". technical field [0002] The invention relates to a photosensitive chip packaging structure and a manufacturing method thereof, in particular to a photosensitive chip packaging structure and a manufacturing method thereof that can increase light transmittance to improve resolution. Background technique [0003] With the prevalence of audio-visual multimedia, digital imaging equipment has been launched one after another, and the status of its key core component, the image sensor, has become increasingly important. The image sensor is mainly responsible for converting the image signal of light into an electrical signal. According to the type of sensing element, it can usually be divided into a Charge Coupled Device (CCD) image sensor and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
Inventor 刘建宏
Owner XINTEC INC