Radiating unit with antioxidant nano-film and deposition method of antioxidant nano-film

Abstract

The invention provides a radiating unit with an antioxidant nano-film, and the radiating unit comprises a metal body provided with a heating part and a radiating part, wherein at least one nano-metallic compound film is covered on the exteriors of the heating part and the radiating part; the nano-metallic compound film is formed on the radiating unit through the following steps: covering at leastone nano oxide coating on the exterior of the radiating unit, then introducing a reducing gas in a high-temperature environment to reduce and thermally treat the radiating unit and the surface nano oxide coating, and forming the nano-metallic compound film on the surface of the radiating unit after the reduction and thermal treatment; and the nano-metallic compound film can be covered on the surface of the radiating unit to reduce the generation of the oxide on the surface of the radiating unit so as to further avoid the thermal resistance of the radiating unit caused by the oxide.

Description

technical field [0001] The invention relates to a heat dissipation unit with an anti-oxidation nano film and a deposition method thereof, in particular to a heat dissipation unit with an anti-oxidation nano film deposited on the surface and a method for depositing the anti-oxidation nano film. Background technique [0002] The electronic components inside the current electronic equipment will generate heat source during operation. The heat source is generated by the operation of the computing chip. With the improvement of the computing performance of the chip, its power has reached nearly 100 watts. Therefore, if there is no proper heat dissipation mechanism, Then the temperature of the chip will exceed 100°C or more. [0003] Most of the current chips are made of semiconductors (such as silicon), because there are a lot of metal wires and insulating films inside, and the expansion coefficients of these two materials are several times different, so when the temperature is re...

AI Technical Summary

Problems solved by technology

[0005] However, the metal heat sink will gradually oxidize in the air to cause a potential difference to produce an electrochemical reaction and then form a metal oxide. The heat conduction efficiency of the metal oxide is much lower than that of pure metal, so the heat dissipation effect and heat transfer efficiency of the metal heat sink will be reduced. The efficiency is greatly reduced, and when the oxidation situation is serious, the oxidized metal oxide will easily peel off from the metal surface due to its loose structure, thus contaminating the chip

[0006] In addition, the surface color of the metal will change after oxidation and affect its appearance

[0007] In addition, if the metal heat sink is sintered with powder (such as copper or aluminum) to form a porous structure, it is more likely to reduce its heat dissipation performance due to oxidation. Plating a layer of nickel or tin plating, the nickel plating method includes electrolytic plating and electroless plating (electroless plating); however, the plating film of this aqueous solution process is often polluted (such as adsorbed acid ions), and the result will be erosion semiconductor package

[0008] In addition, the heat conduction efficiency of nickel or tin plating is much lower than that of commonly used copper heat sinks, so it will affect the heat dissipation effect of copper

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