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Semiconductor element having metal gate and manufacturing method thereof

A manufacturing method and metal gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as the ability to fill gate grooves in complex process integration, and achieve the effect of ensuring reliability

Active Publication Date: 2015-01-07
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that although the gate-last process can avoid high thermal budget processes such as the source / drain ultra-shallow junction surface activation tempering and the formation of metal silicides, and has a wider selection of materials, it still faces the integration of complex processes and the Reliability requirements such as gate groove filling capability

Method used

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  • Semiconductor element having metal gate and manufacturing method thereof
  • Semiconductor element having metal gate and manufacturing method thereof
  • Semiconductor element having metal gate and manufacturing method thereof

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Embodiment Construction

[0027] see Figure 1 to Figure 8 , Figure 1 to Figure 8 It is a schematic diagram of a first preferred embodiment of the method for manufacturing a semiconductor element with a metal gate provided by the present invention. Such as figure 1 As shown, firstly, a semiconductor substrate 100 is provided, such as a silicon substrate, a silicon-containing substrate, or a silicon-on-insulator (SOI) substrate, etc., and a first active region 110 and a second active region are defined on the surface of the semiconductor substrate 100 112 , and a plurality of shallow trench isolation (STI) 102 is formed in the semiconductor substrate 100 for electrically isolating the first active region 110 and the second active region 112 . Next, the first conductive type transistor 120 and the second conductive type transistor 122 are respectively formed on the semiconductor substrate 100 in the first active region 110 and the second active region 112 . In this preferred embodiment, the first cond...

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Abstract

The invention discloses a semiconductor element having a metal gate and a manufacturing method thereof. The semiconductor element comprises a semiconductor substrate, a gate dielectric layer and at least one first conducting metal gate, wherein the gate dielectric layer is formed on the semiconductor substrate; the first conducting metal gate is formed on the gate dielectric layer; the first conducting metal gate comprises a filled metallic layer and a U-shaped metallic layer which is arranged between the gate dielectric layer and the filled metallic layer; and the highest part of the U-shaped metallic layer is lower than the filled metallic layer.

Description

technical field [0001] The invention relates to a semiconductor element with a metal gate and a manufacturing method thereof, in particular to a semiconductor element with a metal gate and a manufacturing method thereof implementing a gate last process. Background technique [0002] In the known semiconductor industry, polysilicon is widely used in semiconductor devices such as metal-oxide-semiconductor (MOS) transistors as a standard gate material choice. However, as the size of MOS transistors continues to shrink, traditional polysilicon gates have problems such as boron penetration (boronpenetration) that leads to device performance degradation, and unavoidable depletion effects, making the equivalent gate dielectric The layer thickness increases, the gate capacitance value decreases, and then leads to the decline of the driving ability of the device. Therefore, the semiconductor industry is also trying new gate materials, such as using work function (work function) meta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/49H01L29/06H01L21/8234H01L21/335
Inventor 黄光耀杨玉如廖俊雄周珮玉
Owner UNITED MICROELECTRONICS CORP