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Semiconductor light emitting element

A light-emitting element, semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc.

Active Publication Date: 2015-04-29
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the light emitting diodes formed by this prior art still have its defects

Method used

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  • Semiconductor light emitting element
  • Semiconductor light emitting element
  • Semiconductor light emitting element

Examples

Experimental program
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Embodiment Construction

[0037] Some embodiments of the present invention are described in detail as follows, wherein the same numerals represent elements with the same or the same functions, and the accompanying drawings are not drawn according to actual scale, and their function is only to express the structural features of the present invention. When the following description indicates that an element is on top of another element, it may mean that the element is directly on the other element or that an intervening element may exist; similarly, when it is indicated that an element is "connected" to another element , which may indicate that this element is directly connected to another element or that there may be intervening elements. Conversely, when it is said that an element is "directly on" another element or that an element is "directly connected" to another element, there are no intervening elements therebetween.

[0038] Many specific details, such as specific structures, components, material...

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Abstract

The invention discloses a semiconductor light emitting element which comprises a substrate. The substrate has a surface comprising a plane and a plurality of bumps which are protruded above the plane, wherein the plane is in a specific crystal plane direction. The bumps have external surfaces formed by a plurality of sidewall surfaces and the crystal plane directions of the sidewall surfaces generally not include the specific crystal plane direction. The bumps, which are to be viewed from a side, have a contour line and the contour line, from bottom of the bumps to top of the bumps, includes at least one turning point. A first conductive type semiconductor layer is located on the surface of the substrate. A luminescent layer is located on the first conductive type semiconductor layer. A second conductive type semiconductor layer is located on the luminescent layer. Epitaxial quality and light extraction efficiency can be improved by using the semiconductor light emitting element of the invention.

Description

technical field [0001] The present invention relates to a semiconductor light emitting element, in particular to a semiconductor light emitting element with improved epitaxy quality and light extraction efficiency. Background technique [0002] Light-emitting diode is a semiconductor light-emitting element. Compared with traditional light bulbs, it has the advantages of small size, long life, low voltage / current drive, not easy to break, no significant heat problems when emitting light, no mercury, and power saving. Therefore, its application range There is a gradual increasing trend. [0003] figure 1 It is a schematic cross-sectional view of an existing light-emitting diode. refer to figure 1 , the light emitting diode 10 includes a substrate 12, a first conductivity type semiconductor layer 14, a light emitting layer 16, a second conductivity type semiconductor layer 18, an ohmic contact layer 20, a first electrode 22, and a second electrode 24, wherein the first condu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/22
Inventor 许圣贤
Owner EPISTAR CORP