Semiconductor photoelectric structure for improving light extraction efficiency and manufacturing method thereof

An extraction efficiency, semiconductor technology, applied in semiconductor devices, circuits, electrical components, etc., to achieve the effect of improving light extraction efficiency, reducing defect density, and improving epitaxy quality

Inactive Publication Date: 2012-12-26
ZHANJING TECH SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the above method can improve the light extraction efficiency, there are problems of process stability and yield in the process of implementing secondary chip bonding on chips

Method used

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  • Semiconductor photoelectric structure for improving light extraction efficiency and manufacturing method thereof
  • Semiconductor photoelectric structure for improving light extraction efficiency and manufacturing method thereof
  • Semiconductor photoelectric structure for improving light extraction efficiency and manufacturing method thereof

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Embodiment Construction

[0073] The direction of the present invention discussed here is a semiconductor optoelectronic element structure and its manufacturing method which can improve the light extraction efficiency. In order to provide a thorough understanding of the present invention, detailed steps and components thereof will be set forth in the following description. Obviously, the practice of the invention is not limited to specific details known to those skilled in the semiconductor optoelectronic process. On the other hand, well-known components or steps have not been described in detail so as not to unnecessarily limit the invention. The preferred embodiments of the present invention will be described in detail as follows, but in addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, it is based on the following claims .

[0074] An object of the present invention is to improv...

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Abstract

The invention relates to a semiconductor photoelectric structure for improving light extraction efficiency and a manufacturing method thereof. The semiconductor photoelectric structure comprises a substrate and a buffer layer positioned on the substrate, wherein the buffer layer is provided with a continuous hole pattern between the buffer layer and the substrate; a semiconductor layer is positioned on the buffer layer, and comprises an n-type conduction layer positioned on the buffer layer, a light emitting layer positioned on the n-type conduction layer, a p-type conduction layer positioned on the light emitting layer, a transparent electrically-conductive layer positioned on the semiconductor layer, a p-type electrode positioned on the transparent electrically-conductive layer, and an n-type electrode positioned on the n-type conduction layer. Continuous holes are formed below the light emitting layer to reflect the light emitted by the light emitting layer, so that the light intensity and luminance of a light emitting surface are improved. In addition, the defect density of an epitaxy can be reduced, and the quality of the epitaxy can be improved.

Description

technical field [0001] The invention relates to a structure of a group III nitride semiconductor light-emitting element and a manufacturing method thereof, in particular to a structure for improving light extraction rate and a manufacturing method thereof. Background technique [0002] The traditional light-emitting diode structure is limited by total reflection and transverse waveguide effect, so it is impossible to take out all the light generated by the light-emitting layer, and some of it will be absorbed by internal components such as active layer, buffer layer, material defects, and metal electrodes, making the light-emitting diode as a whole The light extraction rate is low. [0003] Taking the blue-white gallium nitride (GaN) group III nitride light-emitting diode as an example, the refractive index of gallium nitride (GaN) is 2.5, and the refractive index of air is 1. Assuming that the light is emitted on a uniform optical surface, it can be calculated The critical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 黄世晟涂博闵吴芃逸林文禹马志邦洪梓健沈佳辉
Owner ZHANJING TECH SHENZHEN
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