Light-emitting diode (LED) structure

Abstract

The invention discloses a light-emitting diode (LED) structure which comprises a substrate, a first doped semiconductor layer, a first electrode, a light-emitting layer, a second doped semiconductor layer and a second electrode, wherein the substrate is provided with a surface and a plurality of cylindrical photon crystals positioned on the surface; the first doped semiconductor layer is arranged on the substrate to cover the photon crystals; the light-emitting layer, the second doped semiconductor layer and the second electrode are sequentially arranged on part of the first doped semiconductor layer; and the first electrode is arranged on part of the first doped semiconductor layer on which the light-emitting layer is not covered. Because the substrate provided with the photon crystals can improve the epitaxial quality of the first doped semiconductor layer and increase the light energy of the forward ejected LED structure, the light-emitting efficiency of the LED structure can be effectively improved.

Description

technical field [0001] The invention relates to a light emitting element, in particular to a light emitting diode structure. Background technique [0002] Compared with traditional lamps, light-emitting diodes have absolute advantages, such as small size, long life, low voltage / current drive, not easy to break, no significant heat problems when emitting light, no mercury (no pollution problems), good luminous efficiency ( Power-saving) and other characteristics, and the luminous efficiency of light-emitting diodes has been continuously improved in recent years, so light-emitting diodes have gradually replaced fluorescent lamps and incandescent bulbs in some fields, such as scanner light sources that require high-speed response, backlights for liquid crystal displays or Dashboard lighting, traffic lights, and general lighting devices for front light vehicles. [0003] Moreover, since the nitrogen-containing III-V compound is a material with a wide band energy gap, its lumine...

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Problems solved by technology

[0007] However, arbitrarily roughening the substrate surface cannot effectively improve the external quantum efficiency of the LED structure.

On the one hand, when the concave pattern or the convex pattern on the surface of the substrate is too large, the crystallinity of the n-type doped semiconductor layer grown on the surface will be reduced, thereby reducing the internal quantum efficiency of the light emitting diode structure, leading to the inability to improve the external quantum efficiency

On the other hand, arbitrary roughening of the substrate surface will result in the light energy transmitted laterally being more easily absorbed by the roughened surface, resulting in attenuation of the light exiting the LED structure, thus failing to achieve sufficient external quantum efficiency.

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