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Method for chemical mechanical grinding of metal

A chemical mechanical and metal technology, applied in the field of semiconductor manufacturing, can solve problems such as inability to achieve, achieve the effect of polishing and flattening, and overcome structural defects

Active Publication Date: 2011-12-28
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

That is to say, this method adopted in the third process is not enough to thoroughly solve the defects of metal copper in the grinding process, that is, it cannot be realized image 3 ideal structure in

Method used

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  • Method for chemical mechanical grinding of metal
  • Method for chemical mechanical grinding of metal
  • Method for chemical mechanical grinding of metal

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Embodiment Construction

[0033] In order to make the object, technical solution, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0034]The core idea of ​​the present invention is that when metal copper passes through the third grinding table, it is divided into two steps: the first step: using a grinding liquid with a grinding selection ratio greater than 1 for the oxide layer and metal copper, and for the metal copper and the oxide layer Grinding, when the height of the metal copper and the oxide layer is equal, the second step is carried out; the second step adopts the grinding liquid with the same grinding ratio of the oxide layer and the metal copper, and the metal copper and the oxide layer are ground until the metal copper The height reaches the predetermined height. Or the second embodiment of the present invention is: when metal copper passes through the third grinding t...

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Abstract

The invention provides a method for chemically and mechanically polishing a metal. The method comprises a step of performing grinding on three grinding tables. While performing grinding on the third grinding table, the method comprises the following steps of: presetting first grinding time and second grinding time, and performing the first step of grinding on the third grinding table within the first grinding time, and performing the second step of grinding on the third grinding table within the second grinding time; grinding an oxide layer and a metal by employing a grinding fluid having a grinding selection ratio greater than 1 to the oxide layer and the metal; when the first predetermined grinding time expires, grinding the oxide layer and the metal by employing a grinding fluid havinga grinding selection not greater than 1 to the oxide layer and the metal; and when the second predetermined grinding time expires, enabling the metal to reach a predetermined thickness and keep as high as the oxide layer. The method greatly improves the planarization degree of the metal in the chemical mechanical polishing process.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical grinding method for metal. Background technique [0002] At present, with the wide application of electronic devices, the manufacturing process of semiconductors has been developed rapidly. In the manufacturing process of semiconductors, a chemical mechanical polishing process (CMP) is involved. Copper is generally used for metal interconnection lines in the interconnection layer of the back-end process, so chemical mechanical polishing of copper is required. [0003] In the prior art, the grinding of the metal copper layer is mainly realized by three grinding tables, and each grinding table performs a grinding process respectively. The method of chemical mechanical grinding of metal copper will be described in detail below. [0004] figure 1 It is a schematic cross-sectional view of the first process of the chemical mechanical polishin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04H01L21/768
Inventor 邓武锋江志琴
Owner SEMICON MFG INT (SHANGHAI) CORP
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