Semiconductor structure

Abstract

The invention discloses a semiconductor structure which comprises a semiconductor substrate, wherein the surface of the semiconductor substrate is provided with a metal layer; the semiconductor substrate is provided with a dielectric layer covering the metal layer, a contact hole for exposing the metal layer is arranged in the dielectric layer, a conducting medium is filled in the contact hole; a bulge is arranged on the side wall of the contact hole has a certain distance with the metal layer. The invention can reduce the possibility of open circuit happening to the semiconductor structure.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure. Background technique [0002] With the development of integrated circuits to ultra-large-scale integrated circuits, the circuit density inside integrated circuits is increasing, and the number of components contained is also increasing. This development makes the surface of the wafer unable to provide enough area to manufacture the required interconnection lines. [0003] In order to meet the requirements of interconnection lines after shrinking components, the design of two or more layers of multilayer metal interconnection lines has become a method commonly used in VLSI technology. At present, the conduction between different metal layers or the metal layer and the pad layer is realized through the contact hole structure, and the formation of the contact hole structure includes: a dielectric layer between the metal layer and the metal layer...

AI Technical Summary

Problems solved by technology

[0010] The contact hole structure formed by the above-mentioned conventional technology is easily affected by external force to cause the conductive medium in the contact hole to move, so that the conductive material in the contact hole 40 is separated from the metal layer 20 below it, so that the contact hole structure is disconnected.

Images